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1N3213R Datasheet(PDF) 1 Page - GeneSiC Semiconductor, Inc.

Part No. 1N3213R
Description  Silicon Standard Recovery Diode
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Manufacturer  GENESIC [GeneSiC Semiconductor, Inc.]
Direct Link  http://www.genesicsemi.com/
Logo GENESIC - GeneSiC Semiconductor, Inc.

1N3213R Datasheet(HTML) 1 Page - GeneSiC Semiconductor, Inc.

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VRRM = 400 V - 600 V
IF = 15 A
Features
• High Surge Capability
DO-5 Package
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
3. Stud is base.
Parameter
Symbol
Unit
Repetitive peak reverse voltage
VRRM
V
• Types from 400 V to 600 V VRRM
1N3212 thru 1N3214R
2. Reverse polarity (R): Stud is anode.
Conditions
1N3212 (R)
1N3213 (R)
1N3214 (R)
500
Silicon Standard
Recovery Diode
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
400
600
pp
g
RMS reverse voltage
VRMS
V
DC blocking voltage
VDC
V
Continuous forward current
IF
A
Operating temperature
Tj
°C
Storage temperature
Tstg
°C
Parameter
Symbol
Unit
Diode forward voltage
μA
mA
Thermal characteristics
Thermal resistance, junction - ca
RthJC
°C/W
VR = 50 V, Tj = 25 °C
IF = 15 A, Tj = 25 °C
Reverse current
IR
VF
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave
IF,SM
A
V
TC = 25 °C, tp = 8.3 ms
TC ≤ 150 °C
Conditions
350
280
0.65
0.65
VR = 50 V, Tj = 150 °C
10
10
10
500
400
10
1N3214 (R)
1.5
10
10
-55 to 150
-55 to 150
-55 to 150
-55 to 150
-55 to 150
1N3212 (R)
1N3213 (R)
0.65
15
15
15
297
297
297
420
600
1.5
1.5
-55 to 150
Feb 2016
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/
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