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ISL6115A Datasheet(PDF) 6 Page - Renesas Technology Corp

Part No. ISL6115A
Description  12V Power Distribution Controllers
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Maker  RENESAS [Renesas Technology Corp]
Homepage  http://www.renesas.com
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ISL6115A Datasheet(HTML) 6 Page - Renesas Technology Corp

 
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ISL6115A
FN6855 Rev 1.00
Page 6 of 10
April 23, 2010
Upon a UV condition, the PGOOD signal will pull low
when connected through a resistor to the logic or VDD
supply. This pin is a UV fault indicator. For an OC
latch-off indication, monitor CTIM, pin 6. This pin will
rise rapidly from 1.8V to VDD once the time-out period
expires.
See Figures 2 through 13 for graphs and waveforms
related to text.
The IC is reset after an OC latch-off condition by a low
level on the PWRON pin and is turned on by the
PWRON pin being driven high.
Application Considerations
Design applications where the CR Vth is set extremely
low (25mV or less), there is a two-fold risk to
consider.
• There is the susceptibility to noise influencing the
absolute CR Vth value. This can be addressed with a
100pF capacitor across the RSENSE resistor.
• Due to common mode limitations of the
overcurrent comparator, the voltage on the ISET
pin must be 20mV above the IC ground either
initially (from ISET*RSET) or before CTIM reaches
time-out (from gate charge-up). If this does not
happen, the IC may incorrectly report overcurrent
fault at start-up when there is no fault. Circuits
with high load capacitance and initially low load
current are susceptible to this type of unexpected
behavior.
Do not signal nor pull-up the PWRON input to > 5V.
Exceeding 6V on this pin will cause the internal charge
pump to malfunction.
During the soft-start and the time-out delay duration
with the IC in its current limit mode, the VGS of the
external N-Channel MOSFET is reduced driving the
MOSFET switch into a (linear region) high rDS(ON)
state. Strike a balance between the CR limit and the
timing requirements to avoid periods when the
external N-Channel MOSFETs may be damaged or
destroyed due to excessive internal power dissipation.
Refer to the MOSFET SOA information in the
manufacturer’s data sheet.
When driving particularly large capacitive loads a
longer soft-start time to prevent current regulation
upon charging and a short CR time may offer the best
application solution relative to reliability and FET MTF.
Physical layout of RSENSE resistor is critical to
avoid the possibility of false overcurrent occurrences.
Ideally, trace routing between the RSENSE resistors
and the IC is as direct and as short as possible with
zero current in the sense lines (see Figure 1).
.
CORRECT
TO ISEN AND
CURRENT
SENSE RESISTOR
INCORRECT
FIGURE 1. SENSE RESISTOR PCB LAYOUT
RISET


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