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MRA0510-50H Datasheet(PDF) 1 Page - Motorola, Inc

Part No. MRA0510-50H
Description  UHF POWER TRANSISTOR
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Maker  MOTOROLA [Motorola, Inc]
Homepage  http://www.freescale.com
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MRA0510-50H Datasheet(HTML) 1 Page - Motorola, Inc

   
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MRA0510–50H
MOTOROLA RF DEVICE DATA
The RF Line
UHF Power Transistor
Designed primarily for wideband, large–signal output and driver amplifier
stages in the 500 to 1000 MHz frequency range.
• Designed for Class AB Linear Power Amplifiers
• Specified 28 Volt, 1000 MHz Characteristics:
Output Power — 50 Watts
Power Gain — 7 dB (Min), Class AB
• Built–In Matching Network for Broadband Operation
• Gold Metallization for Improved Reliability
• Diffused Ballast Resistors
• Hermetic Package for Military/Space Applications
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
30
Vdc
Collector–Base Voltage
VCBO
60
Vdc
Emitter–Base Voltage
VEBO
4
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
125
0.715
Watts
W/
°C
Operating Junction Temperature
TJ
200
°C
Storage Temperature Range
Tstg
– 65 to +200
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, RF, Junction to Case (TC = 70°C)
R
θJC
1.4
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS (1)
Collector–Emitter Breakdown Voltage (IC = 25 mA, VBE = 0)
V(BR)CES
60
Vdc
Collector–Base Breakdown Voltage (IC = 25 mA, IE = 0)
V(BR)CBO
60
Vdc
Emitter–Base Breakdown Voltage (IE = 5 mA, IC = 0)
V(BR)EBO
4
Vdc
Collector–Emitter Breakdown Voltage (IC = 25 mA, RBE = 1 Ω)
V(BR)CER
50
Vdc
Collector Cutoff Current (VCB = 30 V, IE = 0)
ICBO
25
mAdc
(1) Each transistor chip measured separately.
(continued)
Order this document
by MRA0510–50H/D
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MRA0510-50H
7.0 dB, 500 – 1000 MHz
50 W
BROADBAND
UHF POWER TRANSISTOR
CASE 391–03, STYLE 1
(HLP–42)
© Motorola, Inc. 1997
REV 1


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