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C3M0120100J Datasheet(PDF) 5 Page - Cree, Inc

Part # C3M0120100J
Description  Silicon Carbide Power MOSFET C3M MOSFET Technology
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Manufacturer  CREE [Cree, Inc]
Direct Link  http://www.cree.com/
Logo CREE - Cree, Inc

C3M0120100J Datasheet(HTML) 5 Page - Cree, Inc

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C3M0120100J Rev. -, 04-2017
Typical Performance
Figure 15. 3rd Quadrant Characteristic at 150 ºC
Figure 13. 3rd Quadrant Characteristic at -55 ºC
-40
-30
-20
-10
0
-6
-5
-4
-3
-2
-1
0
Drain-Source VoltageVDS (V)
Conditions:
TJ = -55 °C
tp < 200 µs
VGS = 10 V
VGS = 5 V
VGS = 15 V
VGS = 0 V
-40
-30
-20
-10
0
-6
-5
-4
-3
-2
-1
0
Drain-Source VoltageVDS (V)
Conditions:
TJ = 25 °C
tp < 200 µs
VGS = 10 V
VGS = 5 V
VGS = 15 V
VGS = 0 V
-40
-30
-20
-10
0
-6
-5
-4
-3
-2
-1
0
Drain-Source VoltageVDS (V)
Conditions:
TJ = 150 °C
tp < 200 µs
VGS = 10 V
VGS = 5 V
VGS = 15 V
VGS = 0 V
Figure 14. 3rd Quadrant Characteristic at 25 ºC
0
5
10
15
20
25
0
200
400
600
800
1000
1200
Drain to Source Voltage, VDS (V)
Figure 16. Output Capacitor Stored Energy
Figure 17. Capacitances vs. Drain-Source
Voltage (0 - 200V)
1
10
100
1000
0
50
100
150
200
Drain-Source Voltage, VDS (V)
Ciss
Coss
Conditions:
TJ = 25 °C
VAC = 25 mV
f = 1 MHz
Crss
1
10
100
1000
0
200
400
600
800
1000
Drain-Source Voltage, VDS (V)
Ciss
Coss
Conditions:
TJ = 25 °C
VAC = 25 mV
f = 1 MHz
Crss
Figure 18. Capacitances vs. Drain-Source
Voltage (0 - 1000V)


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