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C2M0080170P Datasheet(PDF) 7 Page - Cree, Inc |
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C2M0080170P Datasheet(HTML) 7 Page - Cree, Inc |
7 / 10 page 7 C2M0080170P Rev. A, 05-2018 Typical Performance 0.0 0.3 0.6 0.9 1.2 1.5 1.8 0 5 10 15 20 25 External Gate Resistor RG(ext) (Ohms) EOff EOn ETotal Conditions: TJ = 25 °C VDD = 1200 V IDS = 20 A VGS = -5V/+20 V FWD = C2M0080170P L = 200 μH 0 20 40 60 80 100 0 5 10 15 20 25 External Gate Resistor RG(ext) (Ohms) td(off) Conditions: TJ = 25 °C VDD = 1200 V IDS = 20 A VGS = -5V/+20 V FWD = C2M0080170P L = 200 μH tr tf td(on) 0.0 0.3 0.6 0.9 1.2 1.5 0 25 50 75 100 125 150 175 Junction Temperature, TJ (°C) EOn ETotal Conditions: IDS = 20 A VDD = 1200 V RG(ext) = 2.5 Ω VGS = -5V/+20 V FWD = C3M0080170P ( - - -)FWD = C3D10170H L = 200 μH ETotal EOn EOff Figure 26. Clamped Inductive Switching Energy vs. Temperature Figure 27. Switching Times vs. R G(ext) Figure 25. Clamped Inductive Switching Energy vs. R G(ext) Figure28.SwitchingTimesDefinition |
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