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LTC4352 Datasheet(PDF) 3 Page - Linear Technology

Part # LTC4352
Description  Dual 12V Ideal Diode-OR and Single Hot Swap Controller with Current Monitor
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Manufacturer  LINER [Linear Technology]
Direct Link  http://www.linear.com
Logo LINER - Linear Technology

LTC4352 Datasheet(HTML) 3 Page - Linear Technology

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LTC4235
3
4235f
For more information www.linear.com/LTC4235
elecTrical characTerisTics
Note 1: Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating condition for extended periods may affect device
reliability and lifetime.
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
Supplies
VIN
Input Supply Range
l
9
14
V
IIN
Input Supply Current
l
2.7
4
mA
VINTVCC
Internal Regulator Voltage
I = 0, –500µA
l
4.5
5
5.5
V
VINTVCC(UVL)
Internal VCC Undervoltage Lockout
INTVCC Rising
l
2.1
2.2
2.3
V
∆VINTVCC(HYST) Internal VCC Undervoltage Lockout
Hysteresis
l
30
60
90
mV
Ideal Diode Control
∆VFWD(REG)
Forward Regulation Voltage
(VINn – VSENSE+)
l
2
15
28
mV
∆VDGATE
External N-Channel Gate Drive
(VDGATEn – VINn)
∆VFWD = 0.15V; I = 0, –1µA
l
10
12
14
V
ICPO(UP)
CPOn Pull-Up Current
CPO = IN = 12V
l
–50
–90
–120
µA
IDGATE(FPU)
DGATEn Fast Pull-Up Current
∆VFWD = 0.2V, ∆VDGATE = 0V, CPO = 17V
–1.5
A
IDGATE(FPD)
DGATEn Fast Pull-Down Current
∆VFWD = –0.2V, ∆VDGATE = 5V
1.5
A
IDGATE2(DN)
DGATE2 Off Pull-Down Current
D2OFF = 2V, ∆VDGATE2 = 2.5V
l
50
100
200
µA
tON(DGATE)
DGATEn Turn-On Delay
∆VFWD = 0.2V , CDGATE = 10nF
l
0.25
0.5
µs
tOFF(DGATE)
DGATEn Turn-Off Delay
∆VFWD = –0.2V, CDGATE = 10nF
l
0.2
0.5
µs
tPLH(DGATE2)
D2OFF Low to DGATE2 High
l
50
100
µs
Hot Swap Control
∆VSENSE(TH)
Current Limit Sense Voltage Threshold
(VSENSE+ – VSENSE–)
OUT = 11V
OUT = 0V
l
l
22.5
5.8
25
8.3
27.5
10.8
mV
mV
VSENSE+(UVL)
SENSE+ Undervoltage Lockout
SENSE+ Rising
l
1.8
1.9
2
V
∆VSENSE+(HYST) SENSE+ Undervoltage Lockout
Hysteresis
l
10
50
90
mV
ISENSE+
SENSE+ Pin Current
SENSE+ = 12V
l
0.3
0.8
1.3
mA
ISENSE–
SENSEPin Current
SENSE= 12V
l
10
40
100
µA
∆VHGATE
External N-Channel Gate Drive
(VHGATE – VOUT)
I = 0, –1µA
l
10
12
14
V
∆VHGATE(H)
Gate High Threshold (VHGATE – VOUT)
l
3.6
4.2
4.8
V
IHGATE(UP)
External N-Channel Gate Pull-Up Current Gate Drive On, HGATE = 0V
l
–7
–10
–13
µA
IHGATE(DN)
External N-Channel Gate Pull-Down
Current
Gate Drive Off, OUT = 12V,
HGATE = OUT + 5V
l
1
2
4
mA
IHGATE(FPD)
External N-Channel Gate Fast Pull-Down
Current
Fast Turn-Off, OUT = 12V,
HGATE = OUT + 5V
l
100
200
350
mA
VOUT(PGTH)
OUT Power Good Threshold
OUT Rising
l
10.2
10.5
10.8
V
∆VOUT(PGHYST) OUT Power Good Hysteresis
l
110
170
240
mV
tPHL(SENSE)
Sense Voltage (SENSE+ – SENSE)
High to HGATE Low
∆VSENSE = 200mV, CHGATE = 10nF
l
0.5
1
µs
tOFF(HGATE)
ON Low to HGATE Low
EN High to HGATE Low
SENSE+ Low to HGATE Low
SENSE+ UVLO
l
l
l
10
20
10
20
40
20
µs
µs
µs
tD(HGATE)
ON High, EN Low to HGATE Turn-On
Delay
l
50
100
150
ms
tP(HGATE)
ON to HGATE Propagation Delay
ON = Step 0.8V to 2V
l
10
20
µs
The l denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at TA = 25°C. VIN = 12V, unless otherwise noted.


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