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IL211AT Datasheet(PDF) 2 Page - Vishay Siliconix |
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IL211AT Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 6 page ![]() www.vishay.com 2 Document Number 83615 Rev. 1.5, 26-Oct-04 IL211AT/ 212AT/ 213AT Vishay Semiconductors Output Coupler Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Output Coupler Parameter Test condition Symbol Value Unit Collector-emitter breakdown voltage BVCEO 30 V Emitter-collector breakdown voltage BVECO 7.0 V Collector-base breakdown voltage VCEO 70 V ICMAX DC ICMAX DC 50 mA ICMAX t < 1.0 ms ICMAX 100 mA Power dissipation Pdiss 150 mW Derate linearly from 25 °C 2.0 mW/°C Parameter Test condition Symbol Value Unit Total package dissipation (LED + Detector) Ptot 240 mW Derate linearly from 25 °C 3.2 mW/°C Storage temperature Tstg - 55 to +150 °C Operating temperature Tamb - 55 to +100 °C Soldering time at 260 °C 10 sec. Parameter Test condition Symbol Min Typ. Max Unit Forward voltage IF = 10 mA VF 1.3 1.5 V Reverse current VR = 6.0 V IR 0.1 100 µA Capacitance VR = 0 CO 13 pF Parameter Test condition Symbol Min Typ. Max Unit Collector-emitter breakdown voltage IC = 10 µABVCEO 30 V Emitter-collector breakdown voltage IE = 10 µABVECO 7.0 V Collector dark current VCE = 10 V ICEO 5.0 50 nA Collector-emitter capacitance VCE = 0 CCE 10 pF Parameter Test condition Symbol Min Typ. Max Unit Saturation voltage, collector-emitter IF = 10 mA VCEsat 0.4 V Isolation test voltage 1 sec. VISO 3000 VRMS Capacitance (input-output) CIO 0.5 50 pF Resistance input to output RIO 100 G Ω Collector-emitter breakdown voltage IC = 10 µABVCEO 30 V |