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IL211AT Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. IL211AT
Description  Optocoupler, Phototransistor Output, With Base Connection in
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

IL211AT Datasheet(HTML) 2 Page - Vishay Siliconix

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Document Number 83615
Rev. 1.5, 26-Oct-04
IL211AT/ 212AT/ 213AT
Vishay Semiconductors
Output
Coupler
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Output
Coupler
Parameter
Test condition
Symbol
Value
Unit
Collector-emitter breakdown voltage
BVCEO
30
V
Emitter-collector breakdown voltage
BVECO
7.0
V
Collector-base breakdown voltage
VCEO
70
V
ICMAX DC
ICMAX DC
50
mA
ICMAX
t < 1.0 ms
ICMAX
100
mA
Power dissipation
Pdiss
150
mW
Derate linearly from 25 °C
2.0
mW/°C
Parameter
Test condition
Symbol
Value
Unit
Total package dissipation
(LED + Detector)
Ptot
240
mW
Derate linearly from 25 °C
3.2
mW/°C
Storage temperature
Tstg
- 55 to +150
°C
Operating temperature
Tamb
- 55 to +100
°C
Soldering time at 260 °C
10
sec.
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward voltage
IF = 10 mA
VF
1.3
1.5
V
Reverse current
VR = 6.0 V
IR
0.1
100
µA
Capacitance
VR = 0
CO
13
pF
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Collector-emitter breakdown
voltage
IC = 10 µABVCEO
30
V
Emitter-collector breakdown
voltage
IE = 10 µABVECO
7.0
V
Collector dark current
VCE = 10 V
ICEO
5.0
50
nA
Collector-emitter capacitance
VCE = 0
CCE
10
pF
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Saturation voltage, collector-emitter
IF = 10 mA
VCEsat
0.4
V
Isolation test voltage
1 sec.
VISO
3000
VRMS
Capacitance (input-output)
CIO
0.5
50
pF
Resistance input to output
RIO
100
G
Collector-emitter breakdown voltage
IC = 10 µABVCEO
30
V


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