4AM15 datasheet(3/6 Pages) HITACHI

Part #	4AM15

Description	Silicon N-Channel/P-Channel Power MOS FET Array

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Manufacturer	HITACHI [Hitachi Semiconductor]

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4AM15

3

Electrical Characteristics (Ta = 25°C)

N Channel

Item

Symbol

Min

Typ

Max

Unit

Test conditions

Drain to source breakdown

voltage

V(BR)DS

S

200

—

V

ID = 10 mA, VGS = 0

Gate to source breakdown

voltage

V(BR)GS

S

±20

—

V

IG = ±100 µA, VDS = 0

Gate to source leak current

IGSS

—

±10

µA

VGS = ±16 V, VDS = 0

Zero gate voltage drain current IDSS

—

250

µA

VDS = 160 V, VGS = 0

Gate to source cutoff voltage

VGS(off) 2.0

—

4.0

V

ID = 1 mA, VDS = 10 V

Static drain to source on state

resistance

RDS(on) —

0.33

0.5

Ω

ID = 2 A, VGS = 10 V*

1

Forward transfer admittance

|yfs|

1.5

3.0

—

S

ID = 2 A

VDS = 10 V*

1

Input capacitance

Ciss

—

750

—

pF

VDS = 10 V

Output capacitance

Coss

—

260

—

pF

VGS = 0

Reverse transfer capacitance

Crss

—

40

—

pF

f = 1 MHz

Turn-on delay time

td(on)

—

19

—

ns

ID = 2 A

Rise time

tr

—

26

—

ns

VGS = 10 V

Turn-off delay time

td(off)

—

45

—

ns

RL = 15 Ω

Fall time

tf

—

24

—

ns

Body to drain diode forward

voltage

VDF

—

1.0

—

V

IF = 4 A, VGS = 0

Body to drain diode reverse

recovery time

trr

—

125

—

ns

IF = 4 A, VGS = 0,

diF/dt = 100 A/µs

Note:

1. Pulse Test

See characteristic curves of 2SK1957

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