K6F1616U6C datasheet(4/10 Pages) SAMSUNG

Part #	K6F1616U6C

Description	16Mb(1M x 16 bit) Low Power SRAM

Download	10 Pages

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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4 / 10 page

K6F1616U6C Family

Revision 2.0

May 2005

4

CMOS SRAM

PRODUCT LIST

1. LF : Lead Free Product

Industrial Temperature Products(-40~85

°C)

Part Name

Function

K6F1616U6C-FF55

K6F1616U6C-XF55

K6F1616U6C-FF70

K6F1616U6C-XF70

48-FBGA, 55ns, 3.0V

48-FBGA, 55ns, 3.0V, LF1)

48-FBGA, 70ns, 3.0V

48-FBGA, 70ns, 3.0V, LF1)

ABSOLUTE MAXIMUM RATINGS1)

1. Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. Functional operation should be

restricted to recommended operating condition. Exposure to absolute maximum rating conditions for extended periods may affect reliability.

Item

Symbol

Ratings

Unit

Voltage on any pin relative to Vss

VIN,VOUT

-0.2 to VCC+0.3V(Max. 3.6V)

V

Voltage on Vcc supply relative to Vss

VCC

-0.2 to 3.6

V

Power Dissipation

PD

1.0

W

Storage temperature

TSTG

-65 to 150

°C

Operating Temperature

TA

-40 to 85

°C

FUNCTIONAL DESCRIPTION

1. X means don

′t care. (Must be low or high state)

CS1

CS2

OE

WE

LB

UB

I/O1~8

I/O9~16

Mode

Power

H

X1)

High-Z

Deselected

Standby

X1)

L

X1)

High-Z

Deselected

Standby

X1)

H

High-Z

Deselected

Standby

LH

H

L

X1)

High-Z

Output Disabled

Active

LH

H

X1)

L

High-Z

Output Disabled

Active

L

H

L

H

L

H

Dout

High-Z

Lower Byte Read

Active

L

H

L

H

L

High-Z

Dout

Upper Byte Read

Active

L

H

L

H

L

Dout

Word Read

Active

LH

X1)

L

H

Din

High-Z

Lower Byte Write

Active

LH

X1)

L

H

L

High-Z

Din

Upper Byte Write

Active

LH

X1)

L

Din

Word Write

Active

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K6F1616U6C Datasheet(PDF) 4 Page - Samsung semiconductor

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