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IXFR180N10 Datasheet(PDF) 1 Page - IXYS Corporation

Part No. IXFR180N10
Description  HiPerFET Power MOSFETs ISOPLUS247
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

IXFR180N10 Datasheet(HTML) 1 Page - IXYS Corporation

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© 2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
T
J
= 25
°C to 150°C
100
V
V
DGR
T
J
= 25
°C to 150°C; R
GS = 1 MW
100
V
V
GS
Continuous
±20
V
V
GSM
Transient
±30
V
I
D25
T
C
= 25
°C (MOSFET chip capability)
165
A
I
D(RMS)
External lead (current limit)
76
A
I
DM
T
C
= 25
°C, Note 1
720
A
I
AR
T
C
= 25
°C
180
A
E
AR
T
C
= 25
°C60
mJ
E
AS
T
C
= 25
°C3
J
dv/dt
I
S
£ I
DM, di/dt £ 100 A/ms, VDD £ VDSS
5
V/ns
T
J
£ 150°C, R
G = 2 W
P
D
T
C
= 25
°C
400
W
T
J
-55 ... +150
°C
T
JM
150
°C
T
stg
-55 ... +150
°C
T
L
1.6 mm (0.063 in.) from case for 10 s
300
°C
V
ISOL
50/60 Hz, RMS
t = 1 min
2500
V~
Weight
5
g
Symbol
Test Conditions
Characteristic Values
(T
J = 25°C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS = 0 V, ID = 3mA
100
V
V
GS(th)
V
DS = VGS, ID = 8mA
2.0
4.0 V
I
GSS
V
GS = ±20 V, VDS = 0
±100 nA
I
DSS
V
DS
= V
DSS
T
J =
25
°C
100
mA
V
GS = 0 V
T
J = 125°C2 mA
R
DS(on)
V
GS
= 10 V, I
D = 90A
8 m
W
Note 1
Single MOSFET Die
98584A (7/00)
ISOPLUS 247TM
G
D
HiPerFETTM Power MOSFETs
ISOPLUS247TM
(Electrically Isolated Back Surface)
Features
• Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
• Low drain to tab capacitance(<25pF)
• Low R
DS (on) HDMOS
TM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS)
rated
• Fast intrinsic Rectifier
Applications
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC motor control
Advantages
• Easy assembly
• Space savings
• High power density
G = Gate
D = Drain
S = Source
* Patent pending
Isolated back surface*
IXFR 180N10
V
DSS
= 100
V
I
D25
= 165
A
R
DS(on) =
8 m
W
t
rr £ 250 ns
IXYS reserves the right to change limits, test conditions, and dimensions.
Preliminary data


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