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IXFN39N90 Datasheet(PDF) 4 Page - IXYS Corporation |
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IXFN39N90 Datasheet(HTML) 4 Page - IXYS Corporation |
4 / 4 page IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 IXYS reserves the right to change limits, test conditions, and dimensions. Pulse Width - Seconds 10-4 10-3 10-2 10-1 100 101 0.001 0.010 0.100 1.000 V DS - Volts 0 5 10 15 20 25 30 35 40 0 2 4 6 8 10 12 14 16 18 Gate Charge - nC 0 50 100 150 200 250 300 350 400 0 2 4 6 8 10 Crss Coss V DS = 450 V I D = 19.50A I G = 10 mA f = 100kHz Ciss Single Pulse V SD - Volts 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 20 40 60 80 100 T J = 125 OC T J = 25 OC V GS = 0V IXFN 39N90 Figure 7. Gate Charge Figure 8. Capacitance Curves Figure 9. Forward Voltage Drop of the Intrinsic Diode Figure 10. Transient Thermal Resistance |
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