IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:

4,835,592

4,881,106

5,017,508

5,049,961

5,187,117

5,486,715

4,850,072

4,931,844

5,034,796

5,063,307

5,237,481

5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

Pulse Width - Seconds

0.001

0.010

0.100

1.000

V

0

5

10

15

20

25

30

35

40

0

2

4

6

8

10

12

14

16

18

Gate Charge - nC

0

50

100 150 200 250 300 350 400

0

2

4

6

8

10

Crss

Coss

V

I

I

f = 100kHz

Ciss

Single Pulse

V

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0

20

40

60

80

100

T

T

V

IXFN 39N90

Figure 7. Gate Charge

Figure 8. Capacitance Curves

Figure 9. Forward Voltage Drop of the Intrinsic Diode

Figure 10. Transient Thermal Resistance