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HAL800UT-A Datasheet(PDF) 3 Page - Micronas |
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HAL800UT-A Datasheet(HTML) 3 Page - Micronas |
3 / 24 page HAL 800 Micronas 3 Programmable Linear Hall Effect Sensor 1. Introduction The HAL 800 is an universal magnetic field sensor with a linear output based on the Hall effect. The IC is designed and produced in sub-micron CMOS technol- ogy and can be used for angle or distance measure- ments if combined with a rotating or moving magnet. The major characteristics like magnetic field range, sensitivity, output quiescent voltage (output voltage at B = 0 mT), and output voltage range are programma- ble in a non-volatile memory. The sensor has a ratio- metric output characteristic, which means that the out- put voltage is proportional to the magnetic flux and the supply voltage. The HAL 800 features a temperature compensated Hall plate with choppered offset compensation, an A/D converter, digital signal processing, a D/A converter with output driver, an EEPROM memory with redun- dancy and lock function for the calibration data, a serial interface for programming the EEPROM, and protec- tion devices at all pins. The internal digital signal pro- cessing is of great benefit because analog offsets, temperature shifts, and mechanical stress do not degrade the sensor accuracy. The HAL 800 is programmable by modulating the sup- ply voltage. No additional programming pin is needed. The easy programmability allows a 2-point calibration by adjusting the output voltage directly to the input sig- nal (like mechanical angle, distance or current). An individual adjustment of each sensor during the cus- tomers manufacturing process is possible. With this calibration procedure the tolerances of the sensor, the magnet, and the mechanical positioning can be com- pensated in the final assembly. In addition, the temperature compensation of the Hall IC can be fit to all common magnetic materials by pro- gramming first and second order temperature coeffi- cients of the Hall sensor sensitivity. This enables an operation over the full temperature range with high accuracy. The calculation of the individual sensor characteristics and the programming of the EEPROM memory can easily be done with a PC and the application kit from Micronas. The HAL 800 eases logistic because its characteristics can be programmed in a wide range. Therefore, one Hall IC type can be used for various applications. The sensor is designed for hostile industrial and auto- motive applications and operates with typically 5 V supply voltage in the ambient temperature range from −40 °C up to 150 °C. The HAL 800 is available in the very small leaded package TO-92UT. 1.1. Major Applications Due to the sensor’s versatile programming characteris- tics, the HAL 800 is the optimal system solution for applications such as: – contactless potentiometers, – rotary position measurement, – linear position detection, – magnetic field and current measurement. 1.2. Features – high precision linear Hall effect sensor with ratiometric output – multiple programmable magnetic characteristics with non-volatile memory – digital signal processing – temperature characteristics programmable for matching all common magnetic materials – programmable clamping voltages – programming with a modulation of the supply voltage – lock function and redundancy for EEPROM memory – operates from −40 °C up to 150 °C ambient temperature – operates from 4.5 V up to 5.5 V supply voltage – operates with static magnetic fields and dynamic magnetic fields up to 2 kHz – choppered offset compensation – overvoltage and reverse-voltage protection at all pins – magnetic characteristics extremely robust against mechanical stress – short-circuit protected push-pull output – EMC optimized design |
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