 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
ESDA6V1-4F1 Datasheet(PDF) 2 Page - STMicroelectronics |
|
||||||||||||||||||||||||||||||
ESDA6V1-4F1 Datasheet(HTML) 2 Page - STMicroelectronics |
|
|
2 / 6 page 
2/6 ESDA6V1-4F1 Symbol Test conditions Value Unit VPP ESD discharge - MIL STD 883E - Method 3015-6 IEC61000-4-2 air discharge IEC61000-4-2 contact discharge ±25 ±15 ±8 kV PPP Peak pulse power (8/20 µs) 150 W Tj Junction temperature 150 °C Tstg Storage temperature range -55 to +150 °C TL Lead solder temperature (10 seconds duration) 260 °C Top Operating temperature range -40 to +85 °C ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C) Symbol Parameter VRM Stand-off voltage VBR Breakdown voltage VCL Clamping voltage IRM Leakage current IPP Peak pulse current αT Voltage temperature coefficient C Capacitance per line Rd Dynamic impedance VF Forward voltage drop ELECTRICAL CHARACTERISTICS (Tamb = 25°C) V I Slope = 1/Rd VCLVBR VRM IPP IRM IR Type VBR @IR IRM @VRM Rd TC min. max. max. typ. max max note 1 note 2 0V bias VV mA µAV m Ω 10 -4/°C pF ESDA6V1- 4F1 6.1 7.2 1 10 5 350 6 250 Note 1: Square pulse IPP = 15A, tp = 2.5µs Note 2: ∆VBR = αT*(Tamb -25)*VBR(25°C) |
English ▼
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
