CT60AM-18C datasheet(2/6 Pages) RENESAS

Part #	CT60AM-18C

Description	Insulated Gate Bipolar Transistor

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Manufacturer	RENESAS [Renesas Technology Corp]

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CT60AM-18C

Rev.1.00, Aug.20.2004, page 2 of 5

Electrical Characteristics

(Unless otherwise specified, Tj = 25°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test conditions

Collector-emitter breakdown voltage

V(BR)CES

1000

not

e1

——

V

IC = 1 mA, VGE = 0 V

Collector-emitter leakage current

ICES

——

1

mA

VCE = 900 V, VGE = 0 V

Gate-emitter leakage current

IGES

——

±0.5

µAVGE = ±20 V, VCE = 0 V

Gate-emitter threshold voltage

VGE(th)

2.0

4.0

6.0

V

IC = 6 mA, VCE = 10 V

Collector-emitter saturation voltage

VCE(sat)

—2.0

2.7

V

IC = 60 A, VCE = 15 V

Input capacitance

Ciss

—

5000

—

pF

Output capacitance

Coss

—

125

—

pF

Reverse transfer capacitance

Crss

—

85

—

pF

VCE = 25 V, VGE = 0 V,

f = 1MHz

Turn-on delay time

td(on)

—0.05—

µs

Rise time

tr

—0.12—

µs

Turn-off delay time

td(off)

—0.30—

µs

Fall time

tf

—0.25—

µs

IC = 60 A, Resistive loads,

VCC = 300 V, VGE = 15 V,

RG = 10

Ω

Tail loss

Etail

—

0.6

1.0

mJ/pls

Tail current

Itail

—6

12

A

ICP = 60 A, Tj = 125

°C,

dv/dt = 200 V/

µs,

Single-device voltage

resonance circuit

Emitter-collector voltage

VEC

——

3

V

IE = 60 A, VGE = 0 V

Diode reverse recovery time

trr

—0.5

2

µsIE = 60 A, di/dt = 20 A/µs

Thermal resistance (IGBT)

Rth(j-c)

—

0.625

°C/W

Junction to case

Thermal resistance (Diode)

Rth(j-c)

—

4.0

°C/W

Junction to case

Notes: 1

Selected value

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