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DTA114TE Datasheet(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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DTA114TE Datasheet(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
1 / 3 page Production specification Digital Transistor DTAXXXTE H037 www.gmesemi.com Rev.A 1 FEATURES Epitaxial planar die construction. Complementary NPN types available(DTC). Built-in biasing resistors,R1only. Also available in lead free version. APPLICATIONS The PNP style digital transistor. SOT-523 ORDERING INFORMATION Type No. Marking Package Code DTA114TE 94 SOT-523 DTA143TE 93 SOT-523 DTA144TE 96 SOT-523 MAXIMUM RATING @ Ta=25 ℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V IC(Max.) Collector Current -100 mA PD Power Dissipation 150 mW RθJA Thermal Resistance, Junction to Ambient Air 625 ℃/W Tj,Tstg Operating and Storage and Temperature Range -55 to +150 ℃ Pb Lead-free |
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