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19MT050XF Datasheet(PDF) 2 Page - International Rectifier

Part No. 19MT050XF
Description  FULL BRIDGE FREDFET MTP HEXFET POWER MOSFET
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

19MT050XF Datasheet(HTML) 2 Page - International Rectifier

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19MT050XF
Bulletin I27128 Rev.C 07/03
2
www.irf.com
gfs
Forward Transconductance
26
S
VDS = 50V, ID = 19A
Qg
Total Gate Charge
105
160
nC
ID = 31A
Qgs
Gate-to-Source Charge
36
55
VDS = 400V
Qgd
Gate-to-Drain ("Miller") Charge
46
70
VGS = 10V
(4)
td(on)
Turn-on Delay Time
49
74
ns
ID = 31A
td(off)
Turn-off Delay Time
80
120
VDS = 250V
tr
Rise Time
165
250
VGS = 10V
tf
Fall Time
76
115
RG = 4.3Ω
Ciss
Input Capacitance
4808 7210
pF
VGS = 0V
Coss
Output Capacitance
1165 1750
VDS = 25V
Crss
Reverse Transfer Capacitance
40
60
f = 1.0 MHz
V(BR)DSS Drain-to-SourceBreakdownVoltage
500
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/ Temperature Coeff. of
0.48
V/°C ID = 4mA, reference to TJ = 25°C
∆TJ
Breakdown Voltage
RDS(ON) Static Drain-to-Source On-Resistance
0.19 0.22
VGS = 10V, ID = 19A
(4)
0.21 0.25
VGS = 10V, ID = 31A
VGS(th)
Gate Threshold Voltage
3.0
6.0
V
VDS = VGS, ID = 250µA
IDSS
Drain-to-Source Leakage Current (6)
50
µA
VDS = 500V, VGS = 0V
2mA VDS = 400V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
150
nA
VGS = 30V
Gate-to-Source Reverse Leakage
- 150
VGS = - 30V
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
Dynamic Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
IS
Continuous Source Current
31
A
MOSFET symbol
(Body Diode)
showing the
ISM
Pulsed Source Current
124
integral reverse
(Body Diode)
(1)
p-n junction diode
VSD
Diode Forward Voltage
1.01
1.1
V
TJ = 25°C, IS = 31A, VGS = 0V
(4)
trr
Reverse Recovery Time
252
378
ns
TJ = 125°C, IF = 31A
Qrr
Reverse Recovery Charge
1619 2428
nC
di/dt = 100A/µs
(4)
Diode Characteristics @ TJ = 25°C (unless otherwise specified)
Parameters
Min Typ Max Units Test Conditions
S
D
G


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