7

3.0 RADIATION HARDNESS

The UT69RH051 incorporates special design and layout features

which allow operation in high-level radiation environments.

UTMC has developed special low-temperature processing

techniques designed to enhance the total-dose radiation hardness

of both the gate oxide and the field oxide while maintaining the

circuit density and reliability. For transient radiation hardness

and latchup immunity, UTMC builds all radiation-hardened

products on epitaxial wafers using an advanced twin-tub CMOS

process. In addition, UTMC pays special attention to power and

ground distribution during the design phase, minimizing dose-

rate upset caused by rail collapse.

Note:

2. Adams 90% worst case environment (geosynchronous).

Notes:

1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, and functional operation of the device

at these or any other conditions beyond limits indicated in the operational sections of this specification is not recommended. Exposure to absolute maximum rating

conditions for extended periods may affect device reliability.

2. Test per MIL-STD-883, Method 1012.

Total Dose

1.0E6

rad(Si)

LET Threshold

20

Neutron Fluence

1.0E14

Saturated Cross-Section (1Kx8)

1E-4

Single Event Upset

1.3E-7

LET>126

SYMBOL

PARAMETER

LIMITS

UNITS

DC Supply Voltage

-0.5 to 7.0

V

Voltage on Any Pin

V

Storage Temperature

-65 to +150

°C

Maximum Power Dissipation

750

mW

Maximum Junction Temperature

175

°C

Θ

JC

10

°C/W

DC Input Current

mA