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2SD2573 Datasheet(PDF) 1 Page - Panasonic Semiconductor

Part No. 2SD2573
Description  Silicon NPN triple diffusion planar type
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Manufacturer  PANASONIC [Panasonic Semiconductor]
Direct Link  http://www.panasonic.com/industrial/
Logo PANASONIC - Panasonic Semiconductor

2SD2573 Datasheet(HTML) 1 Page - Panasonic Semiconductor

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Power Transistors
1
Publication date: September 2003
SJD00278BED
2SD2573
Silicon NPN triple diffusion planar type
For high current amplification, power amplification
■ Features
• Low collector-emitter saturation voltage V
CE(sat)
• Allowing supply with the radial taping
■ Absolute Maximum Ratings T
a = 25°C
■ Electrical Characteristics T
a = 25°C ± 3°C
Unit: mm
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC = 25 mA, IB = 0
60
V
Collector-base cutoff current (Emitter open)
ICBO
VCB
= 80 V, I
E
= 0
100
µA
Collector-emitter cutoff current (Base open)
ICEO
VCE = 40 V, IB = 0
100
µA
Emitter-base cutoff current (Collector open)
IEBO
VEB = 6 V, IC = 0
100
µA
Forward current transfer ratio *
hFE
VCE
= 4 V, I
C
= 0.5 A
500
2 500
Collector-emitter saturation voltage
VCE(sat)
IC = 2 A, IB = 0.05 A
1.0
V
Transition frequency
fT
VCE = 12 V, IC = 0.2 A, f = 10 MHz
50
MHz
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
80
V
Collector-emitter voltage (Base open)
VCEO
60
V
Emitter-base voltage (Collector open)
VEBO
6V
Collector current
IC
3A
Peak collector current
ICP
6A
Collector power dissipation TC
= 25°CP
C
1.5
W
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
P
Q
R
hFE
500 to 1 000
800 to 1 500
1 200 to 2 500
7.5±0.2
0.65±0.1
0.7±0.1
1.15±0.2
2.5±0.2
2.5±0.2
0.85±0.1
1.0±0.1
0.7±0.1
1.15±0.2
0.5±0.1
1
0.8 C
23
0.4±0.1
4.5±0.2
0.8 C
0.8 C
1: Emitter
2: Collector
3: Base
MT-3-A1 Package


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