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2SA2018 Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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2SA2018 Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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2 / 4 page  Production specification LOW FREQUENCY TRANSISTOR 2SA2018 H028 www.gmesemi.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN. Typ. MAX. UNIT V(BR)CBO Collector-base breakown voltage IC=-10μA,IE=0 -15 V(BR)CEO Collector- emitter breakown voltage IC=-1mA,IB=0 -12 V(BR)BEO Emitter-base breakown voltage IE=-10μA,IC=0 -6 ICBO Collector cut-off current IE=0,VCB=-15V -100 nA IEBO Emitter cut-off current IC=0,VEB=-6V -100 nA hFE DC current gain VCE=-2V,IC=-10mA 270 680 VCE(sat) collector-emitter saturation voltage IC=-50mA,IB=-5mA -100 -250 mV Cobo Output capacitance IE=0,VCB=-10V,f=1MHz 6.5 pF fT transition frequency IE=10A,VCE =-2V, f=100MHz 260 MHz |
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