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2SA1037 Datasheet(PDF) 2 Page - Galaxy Semi-Conductor Holdings Limited |
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2SA1037 Datasheet(HTML) 2 Page - Galaxy Semi-Conductor Holdings Limited |
2 / 4 page Production specification Silicon Epitaxial Planar Transistor 2SA1037 C013 www.gmesemi.com Rev.A 2 ELECTRICAL CHARACTERISTICS @ Ta=25 ℃ unless otherwise specified Parameter Symbol Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-50 μA,IE=0 -60 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V Emitter-base breakdown voltage V(BR)EBO IE=-50 μA,IC=0 -6 V Collector cut-off current ICBO VCB=-60V,IE=0 -0.1 μA Emitter cut-off current IEBO VEB=-6V,IC=0 -0.1 μA DC current gain hFE VCE=-6V,IC=-1mA 120 560 Collector-emitter saturation voltage VCE(sat) IC=-50mA, IB=-5mA -0.5 V Transition frequency fT VCE=-12V, IC=-2mA f=30MHz 140 MHz Collector output capacitance Cob VCB=-12V,IE=0,f=1MHz 4.0 5.0 pF CLASSIFICATION OF hFE(1) Rank Q R S Range 120-270 180-390 270-560 Marking FQ FR FS |
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