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IRF6678 Datasheet(PDF) 1 Page - International Rectifier

Part No. IRF6678
Description  DirectFET Power MOSFET
Download  9 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF6678 Datasheet(HTML) 1 Page - International Rectifier

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www.irf.com
1
04/18/05
IRF6678
DirectFET™ Power MOSFET
Description
The IRF6678 combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest
on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing
layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6678 balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies. The IRF6678 has been optimized for parameters that are critical in synchronous buck operating from 12 volt
bus converters including R
DS(on) and gate charge to minimize losses in the SyncFET socket.
PD - 96979B
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
Fig 1. Typical On-Resistance vs. Gate Voltage
Typical values (unless otherwise specified)
Fig 2. Typical On-Resistance vs. Gate Voltage
Low Profile (<0.7 mm)
Dual Sided Cooling Compatible
Ultra Low Package Inductance
Optimized for High Frequency Switching
Ideal for CPU Core DC-DC Converters
Optimized for for SyncFET Socket of Sync. Buck Converter
Low Conduction and Switching Losses
Compatible with Existing Surface Mount Techniques
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET MOSFETs.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.75mH, RG = 25Ω, IAS = 23A.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
Notes:
SQ
SX
ST
MQ
MX
MT
DirectFET™ ISOMETRIC
MX
0
102030405060
QG Total Gate Charge (nC)
0.0
1.0
2.0
3.0
4.0
5.0
6.0
VDS= 24V
VDS= 15V
ID= 23A
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max 1.7m
Ω@ 10V 2.3mΩ@ 4.5V
Qg tot
Qgd
Qgs2
Qrr
Qoss Vgs(th)
43nC
15nC
4.0nC
46nC
28nC
1.8V
Absolute Maximum Ratings
Parameter
Units
VDS
Drain-to-Source Voltage
V
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
A
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current
EAS
Single Pulse Avalanche Energy
mJ
IAR
Avalanche Current
A
Max.
24
150
240
±20
30
30
210
24
0
1
2
3
4
5
6
7
8
9
10
VGS, Gate -to -Source Voltage (V)
0
5
10
15
20
ID = 29A
TJ = 25°C
TJ = 125°C


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