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S1D2512X01-A0B0 Datasheet(PDF) 29 Page - Samsung semiconductor

Part # S1D2512X01-A0B0
Description  DEFLECTION PROCESSOR FOR MULTISYNC MONITORS
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

S1D2512X01-A0B0 Datasheet(HTML) 29 Page - Samsung semiconductor

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DEFLECTION PROCESSOR FOR MULTISYNC MONITORS
S1D2512X01
28
Output Section
The H-drive signal is sent to the output through a shaping stage which also controls the H-drive duty cycle (I2C
adjustable). In order to secure scanning power part operation, the output is inhibited in the following circumstances:
Vcc and VDD too low
XRAY protection activated
During horizontal Flyback
H Drive I2C bit control is off.
The output stage is composed of a NPN bipolar transistor. Only the collector is accessible (see Figure 10).
The output stage is intended for reverse base control, where setting the output NPN in off-state will control the
power scanning transistor in off-state.
The maximum output current is 30mA, and the corresponding voltage drop of the output VCEsat is 0.4V Max.
It is evident that the power scanning transistor cannot be directly driven by the integrated circuit. An interface has
to be designed between the circuit and the power transistor which can be of bipolar or MOS type.
X-RAY Protection
The activation of the X-ray protection is obtained by application of a high level on the X-ray input (8V on pin 25). It
inhibits the H-drive and B+ outputs.
This protection is latched; It may be reset either by Vcc or VDD switch off or by I
2C (see Figure 11).
Vertical Dynamic Focus
The S1D2512X01 delivers a vertical parabola wave from on pin 10. Vertical dynamic focus is tracked with VPOS
and VAMP. Its amplitude can be adjusted. It is also affected by S and C corrections. This positive signal once
amplified has to be connected to the CRT focusing grids.
Figure 10. Output Section
26 H-DRIVE


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