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S1D2512X01-A0B0 Datasheet(PDF) 16 Page - Samsung semiconductor

Part # S1D2512X01-A0B0
Description  DEFLECTION PROCESSOR FOR MULTISYNC MONITORS
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

S1D2512X01-A0B0 Datasheet(HTML) 16 Page - Samsung semiconductor

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S1D2512X01
DEFLECTION PROCESSOR FOR MULTISYNC MONITORS
15
B+ SECTION
OPERATING CONDITIONS
ELECTRICAL CHARACTERISTICS
(VCC = 12V, Tamb = 25 °C)
Table 12. B+ Section Operating Conditions
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Minimum feedback resistor
FeedRes Resistor between pins 15 and 14
5
K
Table 13. B+ Section Electrical Characteristics
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Error amplifier open loop gain
OLG
At low frequency (see 10)
85
dB
Sunk current on error amplifier output
when BOUT is in safety condition
Icomp
Pin 14 (see 12)
0.5
mA
Unity gain band width
UGBW
(see 7)
6
MHz
Regulation input bias current
IRI
Current sourced by pin 15
(PNP base)
0.2
µA
Maximum guaranteed error amplifier
output current
EAOI
Current sourced by pin 14
Current sunk by pin 14
0.5
2
mA
mA
Current sense input voltage gain
CSG
Pin 16
3
Max current sense input threshold
voltage
MCEth
Pin 16
1.2
V
Current sense input bias current
ISI
Current sourced by pin 16
(PNP base)
1
µA
Maximum external power transistor on
time
Tonmax
% of H-period
@ fo = 27kHz (see 6)
100
%
B+ output saturation voltage
B+OSV
V28 with I28 = 10mA
0.25
V
Internal reference voltage
IVREF
On error amp positive input
for subaddress 0B
Byte 1000000
4.8
V
Internal reference voltage adjustment
range
VREFADJ
Byte 111111
Byte 000000
+20
-20
%
%
Falling time
tFB+
Pin 28
100
ns


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