Philips Semiconductors

PSMN015-110P

TrenchMOS™ Standard level FET

Product data

Rev. 01 — 08 January 2004

7 of 12

9397 750 12544

© Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Fig 9.

Gate-source threshold voltage as a function of

junction temperature.

Fig 10. Sub-threshold drain current as a function of

gate-source voltage.

Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.

03aa32

0

1

2

3

4

5

-60

0

60

120

180

Tj (°C)

VGS(th)

(V)

max

min

typ

03aa35

10-6

10-5

10-4

10-3

10-2

10-1

02

46

VGS (V)

ID

(A)

max

typ

min

03am58

102

103

104

10-1

1

10

102

VDS (V)

C

(pF)

Ciss

Coss

Crss