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PSMN015-110P Datasheet(PDF) 5 Page - NXP Semiconductors

Part # PSMN015-110P
Description  TrenchMOS Standard level FET
Download  12 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PSMN015-110P Datasheet(HTML) 5 Page - NXP Semiconductors

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Philips Semiconductors
PSMN015-110P
TrenchMOS™ Standard level FET
Product data
Rev. 01 — 08 January 2004
5 of 12
9397 750 12544
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
6.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specified
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 250 µA; VGS =0V
Tj =25 °C
110
-
-
V
Tj = −55 °C
99
--V
VGS(th)
gate-source threshold voltage
ID = 1 mA; VDS =VGS; Figure 9
Tj =25 °C
234V
Tj = 175 °C
1
--V
Tj = −55 °C
-
-
4.4
V
IDSS
drain-source leakage current
VDS = 100 V; VGS =0V
Tj =25 °C
-
0.05
10
µA
Tj = 175 °C
-
-
500
µA
IGSS
gate-source leakage current
VGS = ±20 V; VDS = 0 V
-
2
100
nA
RDSon
drain-source on-state resistance
VGS = 10 V; ID =25A; Figure 7 and 8
Tj =25 °C
-
12
15
m
Tj = 175 °C
-
32.4
40.5
m
Dynamic characteristics
Qg(tot)
total gate charge
ID = 75 A; VDD =80V; VGS =10V; Figure 13
-90
-
nC
Qgs
gate-source charge
-
20
-
nC
Qgd
gate-drain (Miller) charge
-
35
-
nC
Ciss
input capacitance
VGS =0V; VDS = 25 V; f = 1 MHz; Figure 11
-4900 -pF
Coss
output capacitance
-
390
-
pF
Crss
reverse transfer capacitance
-
220
-
pF
td(on)
turn-on delay time
VDD =50V; RL = 1.8 Ω ;
VGS =10V;RG = 5.6 Ω
-25
-
ns
tr
rise time
-65
-
ns
td(off)
turn-off delay time
-
95
-
ns
tf
fall time
-50
-
ns
Source-drain diode
VSD
source-drain (diode forward) voltage IS = 25 A; VGS =0V; Figure 12
-
0.8
1.1
V
trr
reverse recovery time
IS = 20 A; dIS/dt = −100 A/µs; VGS =0V
-
80
-
ns
Qr
recovered charge
-
115
-
nC


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