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PSMN015-110P Datasheet(PDF) 5 Page - NXP Semiconductors |
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PSMN015-110P Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 12 page Philips Semiconductors PSMN015-110P TrenchMOS™ Standard level FET Product data Rev. 01 — 08 January 2004 5 of 12 9397 750 12544 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 6. Characteristics Table 5: Characteristics Tj =25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS =0V Tj =25 °C 110 - - V Tj = −55 °C 99 --V VGS(th) gate-source threshold voltage ID = 1 mA; VDS =VGS; Figure 9 Tj =25 °C 234V Tj = 175 °C 1 --V Tj = −55 °C - - 4.4 V IDSS drain-source leakage current VDS = 100 V; VGS =0V Tj =25 °C - 0.05 10 µA Tj = 175 °C - - 500 µA IGSS gate-source leakage current VGS = ±20 V; VDS = 0 V - 2 100 nA RDSon drain-source on-state resistance VGS = 10 V; ID =25A; Figure 7 and 8 Tj =25 °C - 12 15 m Ω Tj = 175 °C - 32.4 40.5 m Ω Dynamic characteristics Qg(tot) total gate charge ID = 75 A; VDD =80V; VGS =10V; Figure 13 -90 - nC Qgs gate-source charge - 20 - nC Qgd gate-drain (Miller) charge - 35 - nC Ciss input capacitance VGS =0V; VDS = 25 V; f = 1 MHz; Figure 11 -4900 -pF Coss output capacitance - 390 - pF Crss reverse transfer capacitance - 220 - pF td(on) turn-on delay time VDD =50V; RL = 1.8 Ω ; VGS =10V;RG = 5.6 Ω -25 - ns tr rise time -65 - ns td(off) turn-off delay time - 95 - ns tf fall time -50 - ns Source-drain diode VSD source-drain (diode forward) voltage IS = 25 A; VGS =0V; Figure 12 - 0.8 1.1 V trr reverse recovery time IS = 20 A; dIS/dt = −100 A/µs; VGS =0V - 80 - ns Qr recovered charge - 115 - nC |
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