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CY7C1370C-225BZI Datasheet(PDF) 8 Page - Cypress Semiconductor

Part # CY7C1370C-225BZI
Description  512K x 36/1M x 18 Pipelined SRAM with NoBL Architecture
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C1370C-225BZI Datasheet(HTML) 8 Page - Cypress Semiconductor

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CY7C1370C
CY7C1372C
Document #: 38-05233 Rev. *D
Page 8 of 27
capability has been included in order to greatly simplify
Read/Modify/Write sequences, which can be reduced to
simple byte write operations.
Because the CY7C1370C and CY7C1372C are common I/O
devices, data should not be driven into the device while the
outputs are active. The Output Enable (OE) can be deasserted
HIGH before presenting data to the DQ and DQP
(DQa,b,c,d/DQPa,b,c,d for CY7C1370C and DQa,b/DQPa,b for
CY7C1372C) inputs. Doing so will three-state the output
drivers. As a safety precaution, DQ and DQP (DQa,b,c,d/
DQPa,b,c,d for CY7C1370C and
DQa,b/DQPa,b for
CY7C1372C) are automatically three-stated during the data
portion of a write cycle, regardless of the state of OE.
Burst Write Accesses
The CY7C1370C/CY7C1372C has an on-chip burst counter
that allows the user the ability to supply a single address and
conduct up to four WRITE operations without reasserting the
address inputs. ADV/LD must be driven LOW in order to load
the initial address, as described in the Single Write Access
section above. When ADV/LD is driven HIGH on the subse-
quent clock rise, the chip enables (CE1, CE2, and CE3) and
WE inputs are ignored and the burst counter is incremented.
The correct BW (BWa,b,c,d for CY7C1370C and BWa,b for
CY7C1372C) inputs must be driven in each cycle of the burst
write in order to write the correct bytes of data.
Sleep Mode
The ZZ input pin is an asynchronous input. Asserting ZZ
places the SRAM in a power conservation “sleep” mode. Two
clock cycles are required to enter into or exit from this “sleep”
mode. While in this mode, data integrity is guaranteed.
Accesses pending when entering the “sleep” mode are not
considered valid nor is the completion of the operation
guaranteed. The device must be deselected prior to entering
the “sleep” mode. CE1, CE2, and CE3, must remain inactive
for the duration of tZZREC after the ZZ input returns LOW.
Interleaved Burst Address Table
(MODE = Floating or VDD)
First
Address
Second
Address
Third
Address
Fourth
Address
A1,A0
A1,A0
A1,A0
A1,A0
00
01
10
11
01
00
11
10
10
11
00
01
11
10
01
00
Linear Burst Address Table (MODE = GND)
First
Address
Second
Address
Third
Address
Fourth
Address
A1,A0
A1,A0
A1,A0
A1,A0
00
01
10
11
01
10
11
00
10
11
00
01
11
00
01
10
ZZ Mode Electrical Characteristics
Parameter
Description
Test Conditions
Min.
Max
Unit
IDDZZ
Snooze mode standby current
ZZ
> VDD − 0.2V
60
mA
tZZS
Device operation to ZZ
ZZ
> VDD − 0.2V
2tCYC
ns
tZZREC
ZZ recovery time
ZZ
< 0.2V
2tCYC
ns
tZZI
ZZ active to snooze current
This parameter is sampled
2tCYC
ns
tRZZI
ZZ Inactive to exit snooze current
This parameter is sampled
0
ns
Truth Table[1, 2, 3, 4, 5, 6, 7]
Operation
Address
Used
CE
ZZ
ADV/LD WE
BWx
OE
CEN
CLK
DQ
Deselect Cycle
None
H
L
L
X
X
X
L
L-H Three-State
Continue Deselect Cycle
None
X
L
H
X
X
X
L
L-H Three-State
Read Cycle (Begin Burst)
External
L
L
L
H
X
L
L
L-H Data Out (Q)
Read Cycle (Continue Burst)
Next
X
L
H
X
X
L
L
L-H Data Out (Q)
NOP/Dummy Read (Begin Burst)
External
L
L
L
H
X
H
L
L-H Three-State
Dummy Read (Continue Burst)
Next
X
L
H
X
X
H
L
L-H Three-State
Write Cycle (Begin Burst)
External
L
L
L
L
L
X
L
L-H Data In (D)
Write Cycle (Continue Burst)
Next
X
L
H
X
L
X
L
L-H Data In (D)
Notes:
1. X = “Don't Care”, 1 = Logic HIGH, 0 = Logic LOW, CE stands for ALL Chip Enables active. BWx = 0 signifies at least one Byte Write Select is active, BWx = Valid
signifies that the desired byte write selects are asserted, see Write Cycle Description table for details.
2. Write is defined by WE and BW[a:d]. See Write Cycle Description table for details.
3. When a write cycle is detected, all I/Os are tri-stated, even during byte writes.
4. The DQ and DQP pins are controlled by the current cycle and the OE signal.
5. CEN = H inserts wait states.
6. Device will power-up deselected and the I/Os in a tri-state condition, regardless of OE.
7. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles.During a read cycle DQs and DQP[a:d] = Three-state when
OE is inactive or when the device is deselected, and DQs=data when OE is active.


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