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2SK3441 Datasheet(PDF) 1 Page - Toshiba Semiconductor

Part # 2SK3441
Description  TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK3441 Datasheet(HTML) 1 Page - Toshiba Semiconductor

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2SK3441
2002-02-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII)
2SK3441
DC-DC Converter
Relay Drive and Motor Drive Applications
· Low drain-source ON resistance: RDS (ON) = 4.5 mΩ (typ.)
· High forward transfer admittance: |Yfs| = 80 S (typ.)
· Low leakage current: IDSS = 100 µA (max) (VDS = 60 V)
· Enhancement-mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
60
V
Drain-gate voltage (RGS = 20 kW)
VDGR
60
V
Gate-source voltage
VGSS
±20
V
DC
(Note 1)
ID
75
Drain current
Pulse (t <
= 1 ms)
(Note 1)
IDP
300
A
Drain power dissipation (Tc
= 25°C)
PD
125
W
Single pulse avalanche energy
(Note 2)
EAS
468
mJ
Avalanche current
IAR
75
A
Repetitive avalanche energy (Note 3)
EAR
12.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
-55 to 150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
1.00
°C/W
Note 1: Please use devices on condition that the channel temperature
is below 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 113 mH, RG = 25 W,
IAR = 75 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
JEDEC
JEITA
SC-97
TOSHIBA
2-9F1B
Weight: 0.74 g (typ.)
Circuit Configuration
Notice:
Please use the S1 pin for gate
input signal return. Make
sure that the main current
flows into S2 pin.
1
2
3
4


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