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1SS422 Datasheet(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited |
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1SS422 Datasheet(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited |
1 / 3 page Production specification High speed Switching Diode 1SS422 H007 www.gmesemi.com Rev.A 1 FEATURES High reliability with high surge current handing capability. Small package. High speed. APPLICATIONS SOD-523 High speed switching. ORDERING INFORMATION Type No. Marking Package Code 1SS422 6 SOD-523 MAXIMUM RATING @ Ta=25 ℃ unless otherwise specified Parameter Symbol Limits Unit Peak reverse voltage VRM 100 V RMS Reverse voltage VRMS 70 V DC Reverse voltage VR 85 V Peak surge forward current @t=1s IFSM 500 mA Average forward rectified current IO 150 mA Total power dissipation Ptot 150 mW Junction temperature Tj 125 ℃ Storage temperature Tstg -55 to +125 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25 ℃ unless otherwise specified Parameter Symbol Min. Typ. Max. Unit Conditions Forward voltage VF 1.2 V IF=150mA Reverse current IR 0.1 μA VR=85V Diode capacitance Cd 3.0 pF VR=0.5V,f=1MHz Reverse recovery time trr 4 ns VR=6V,IF=10mA,RL=100 Ω Pb Lead-free |
Similar Part No. - 1SS422_17 |
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Similar Description - 1SS422_17 |
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