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IRF7809 Datasheet(PDF) 2 Page - International Rectifier

Part No. IRF7809
Description  N-Channel Application-Specific MOSFETs
Download  4 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

IRF7809 Datasheet(HTML) 2 Page - International Rectifier

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IRF7809/IRF7811
Parameter
Min
Typ
Max
Min
Typ
Max Units
Conditions
Diode Forward
V
SD
1.0
1.0
V
I
S = 15A‚, VGS = 0V
Voltage*
Reverse Recovery
Q
rr
94
82
nC
di/dt ~ 700A/µs
V
DS = 16V, VGS = 0V, IS = 15A
Reverse Recovery
Q
rr(s)
87
74
di/dt = 700A/µs
Charge (with Parallel
(with 10BQ040)
Schottky)
„
V
DS = 16V, VGS = 0V, IS = 15A
Parameter
Min
Typ
Max
Min
Typ
Max Units
Conditions
Drain-to-Source
BV
DSS
30
28
V
V
GS = 0V, ID = 250µA
Breakdown Voltage*
Static Drain-Source
R
DS(on)
6
7.5
9
11
m
Ω V
GS = 4.5V, ID = 15A‚
on Resistance*
Gate Threshold Voltage*
V
GS(th)
1.0
1.0
V
V
DS = VGS,ID = 250µA
Drain-Source Leakage
I
DSS
30
30
µA
V
DS = 24V, VGS = 0
Current*
150
150
V
DS = 24V, VGS = 0,
Tj = 100°C
Gate-Source Leakage
I
GSS
±100
±100
nA
V
GS = ±12V
Current*
Total Gate Chg Cont FET*
Q
G
66.7
86.6
19
23
V
GS=5V, ID=15A, VDS=16V
Total Gate Chg Sync FET*
Q
G
59.6
77.5
17
20.5
V
GS = 5V, VDS< 100mV
Pre-Vth
Q
GS1
14
2.7
V
DS = 16V, ID = 15A
Gate-Source Charge
Post-Vth
Q
GS2
4
1.3
nC
Gate-Source Charge
Gate to Drain Charge
Q
GD
12.2
4.5
Switch Chg(Q
gs2 + Qgd)*
Q
sw
18.4
24
5.8
7.0
Output Charge*
Q
oss
25
30
26
31
V
DS = 16V, VGS = 0
Gate Resistance
R
G
1.5
1.9
Turn-on Delay Time
t
d (on)
17
10
V
DD = 16V, ID = 15A
Rise Time
t
r
10
5
ns
V
GS
= 5V
Turn-off Delay Time
t
d (off)
39
19
Clamped Inductive Load
Fall Time
t
f
19
8
Input Capacitance
C
iss
7300
1800
Output Capacitance
C
oss
900
900
pF
V
DS = 16V, VGS = 0
Reverse Transfer Capacitance C
rss
350
60
Electrical Characteristics
Source-Drain Rating & Characteristics
IRF7809
IRF7811
Current*
Charge
„
Notes:

Repetitive rating; pulse width limited by max. junction temperature.
‚
Pulse width
≤ 300 µs; duty cycle ≤ 2%.
ƒ
When mounted on 1 inch square copper board, t < 10 sec.
„
Typ = measured - Q
oss
*
Devices are 100% tested to these parameters.


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