2003 Nov 27

3

Philips Semiconductors

Product specification

30 V, 1 A

PBSS4130T

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Notes

1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, standard footprint.

THERMAL CHARACTERISTICS

Notes

1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated, standard footprint.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

collector-base voltage

open emitter

−

40

V

collector-emitter voltage

open base

−

30

V

emitter-base voltage

open collector

−

5V

collector current (DC)

−

1A

peak collector current

−

3A

peak base current

−

300

mA

total power dissipation

−

300

mW

−

480

mW

storage temperature

−65

+150

°C

junction temperature

−

150

°C

operating ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

thermal resistance from junction to ambient

in free air; note 1

417

K/W

in free air; note 2

260

K/W