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NTE468 Datasheet(PDF) 1 Page - NTE Electronics

Part No. NTE468
Description  Silicon N-Channel JFET Transistor Chopper, High Speed Switch
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Maker  NTE [NTE Electronics]
Homepage  http://www.nteinc.com
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NTE468 Datasheet(HTML) 1 Page - NTE Electronics

   
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NTE468
Silicon N–Channel JFET Transistor
Chopper, High Speed Switch
Applications:
D Analog Switches
D Choppers
D Commutators
Absolute Maximum Ratings:
Drain–Source Voltage, VDS
35V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Drain–Gate Voltage, VDG
35V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current, IG
50mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (TA = +25°C), PD
625mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°C
5.68mW/
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, TJ
–55
° to +150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg
–55
° to +150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering), TL
+300
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Gate–Source Breakdown Voltage
V(BR)GS
S
IG = 1µA, VDS = 0
35
V
Gate Reverse Current
IGSS
VGS = –15V, VDS = 0
–1.0
nA
Gate–Source Cutoff Voltage
VGS(off)
VDS = 5V, ID = 1µA
–3
–10
V
Drain Cutoff Current
ID(off)
VDS = 5V, VGS = –10V
1.0
nA
ON Characteristics
Zero–Gate Voltage Drain Current
IDSS
VDS = 15V, VGS = 0, Note 1
20
mA
Static Drain–Source ON Resistance
rDS(on)
VDS = 0.1V
30
Drain–Gate ON Capacitance
Cdg(on)
VDS = VGS = 0, f = 1MHz
28
pF
Source–Gate ON Capacitance
Csg(on)
VDS = VGS = 0, f = 1MHz
28
pF
Drain–Gate OFF Capacitance
Cdg(off)
VGS = –10V, f = 1MHz
5
pF
Source–Gate OFF Capacitance
Csg(off)
VGS = –10V, f = 1MHz
5
pF
Note 1. Pulse Test: Pulse Width = 300
µs, Duty Cycle = 3%.


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