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NTE46 Datasheet(PDF) 1 Page - NTE Electronics

Part No. NTE46
Description  Silicon NPN Transistor Darlington, General Purpose Amplifier, Preamp, Driver
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Maker  NTE [NTE Electronics]
Homepage  http://www.nteinc.com
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NTE46 Datasheet(HTML) 1 Page - NTE Electronics

   
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NTE46
Silicon NPN Transistor
Darlington, General Purpose Amplifier,
Preamp, Driver
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCES
100V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Voltage, VCBO
100V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEBO
12V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, IC
500mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (TA = +25°C), PD
625mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°C
5mW/
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (TC = +25°C), PD
1.5W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°C
12mW/
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, TJ
–55
° to +150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg
–55
° to +150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction to Case, RΘJC
83.3
°C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction to Ambient, RΘJA
200
°C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown
Voltage
V(BR)CES IC = 100µA, VBE = 0
100
V
Collector–Base Breakdown Voltage
V(BR)CBO IC = 100µA, IE = 0
100
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 10µA, IC = 0
12
V
Collector Cutoff Voltage
ICBO
VCB = 80V, IE = 0
100
nA
ICES
VCE = 80V, VBE = 0
500
nA
Emitter Cutoff Current
IEBO
VBE = 10V, IC = 0
100
nA


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