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NTE459 Datasheet(PDF) 1 Page - NTE Electronics

Part No. NTE459
Description  N-Channel Silicon JFET Transistor AF Amplifier/Chopper/Switch
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Manufacturer  NTE [NTE Electronics]
Direct Link  http://www.nteinc.com
Logo NTE - NTE Electronics

NTE459 Datasheet(HTML) 1 Page - NTE Electronics

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NTE459
N–Channel Silicon JFET Transistor
AF Amplifier/Chopper/Switch
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Drain–Source Voltage, VDS
50V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Drain–Gate Voltage, VDG
50V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate–Source Voltage, VGS
–50V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Drain Current, ID
10mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (TA = +25°C), PD
300mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°C
2mW/
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, TJ
+175
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg
–55
° to +200°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Gate–Source Breakdown Voltage
V(BR)GSS IG = –1µA, VDS = 0
–50
V
Gate Reverse Current
IGSS
VGS = –30V, VDS = 0
–0.1
nA
VGS = –30V, VDS = 0, TA = +150°C
–100
nA
Gate–Source Cutoff Voltage
VGS(off)
ID = 0.5nA, VDS = 15V
–6
V
Gate–Source Voltage
VGS
ID = 200µA, VDS = 15V
–1
–4
V
ON Characteristics
Zero–Gate–Voltage Drain Current
IDSS
VDS = 15V, VGS = 0, Note 1
2
10
mA
Small–Signal Characteristics
Forward Transfer Admittance
|yfs|
VDS = 15V, VGS = 0, f = 1kHz,
Note 1
3000
6500
µmho
VDS = 15V, VGS = 0, f = 100MHz
3000
µmho
Output Admittance
|yos|
VDS = 15V, VGS = 0, f = 1kHz,
Note 1
20
µmho
Input Capacitance
Ciss
VDS = 15V, VGS = 0, f = 1MHz
6
pF
Reverse Transfer Capacitance
Crss
VDS = 15V, VGS = 0, f = 1MHz
3
pF
Note 1. Pulse Test: Pulse Width
≤ 100ms, Duty Cycle ≤ 10%.


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