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NTE399 Datasheet(PDF) 1 Page - NTE Electronics

Part No. NTE399
Description  Silicon NPN Transistor High Voltage Video Amp (Compl to NTE2366)
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Maker  NTE [NTE Electronics]
Homepage  http://www.nteinc.com
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NTE399 Datasheet(HTML) 1 Page - NTE Electronics

   
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NTE399
Silicon NPN Transistor
High Voltage Video Amp
(Compl to NTE2366)
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO
300V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, VCEO
300V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEBO
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
Continuous
100mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
300mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, PC
900mW
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, TJ
+150
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg
–55
° to +150°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
ICBO
VCB = 200V, IE = 0
1.0
µA
Emitter Cutoff Current
IEBO
VEB = 6V, IC = 0
1.0
µA
DC Current Gain
hFE
VCE = 10V, IC = 5mA
100
220
Current Gain–Bandwidth Product
fT
VCB = 30V, IC = 10mA
50
MHz
Output Capacitance
Cob
VCB = 10V, f = 1MHz
7.5
pF
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 20mA, IB = 2mA
0.6
V
Base–Emitter Saturation Voltage
VBE(sat)
IC = 20mA, IB = 2mA
1.0
V


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