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NTE395 Datasheet(PDF) 1 Page - NTE Electronics |
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NTE395 Datasheet(HTML) 1 Page - NTE Electronics |
1 / 2 page NTE395 Silicon PNP Transistor Wide Band Linear Amplifier Absolute Maximum Ratings: Collector–Base Voltage, VCBO 30V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector–Emitter Voltage, VCEO 25V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Emitter–Base Voltage, VEBO 3V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Collector Current, IC 50mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power Dissipation (TA = +25°C), Ptot 225mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Power Dissipation (TC = +25°C), Ptot 360mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating Junction Temperature, TJ +200 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage Temperature Range, Tstg –55 ° to +200°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Resistance, Junction–to–Case, RthJC 485 °C/W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal Resistance, Junction–to–Ambient, RthJA 775 °C/W . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector–Base Cutoff Current ICBO VCB = 15V, IE = 0 – – 50 nA Collector–Base Breakdown Voltage V(BR)CBO IC = 100µA, IE = 0 30 – – V Collector–Emitter Breakdown Voltage V(BR)CEO IC = 5mA, IB = 0 25 – – V Emitter–Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 3 – – V Static Forward Current Transfer Ratio h21E VCE = 10V, IC = 10mA, Note 1 20 – – Base–Emitter Voltage VBE VCE = 10V, IC = 10mA – 0.75 – V Knee Voltage VCEK IC = 20mA, Note 2 – 0.8 – V Transition Frequency fT VCE = 15V, IC = 10mA 1.4 2.3 – GHz Maximum Oscillation Frequency f VCE = 15V, IC = 10mA – 6.5 – GHz Output Capacitance C22b VCB = 15V, IE = 0, f = 1MHz – 1.1 – pF Note 1. Pulsed. Note 2. VCEK tested with IC = 100ma and IB = values for which IC = 110mA at VCE = 1V. |
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