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IRD3CH42DB6 Datasheet(PDF) 1 Page - International Rectifier |
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IRD3CH42DB6 Datasheet(HTML) 1 Page - International Rectifier |
1 / 6 page IRD3CH42DB6 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 09, 2014 Applications Industrial Motor Drive Uninterruptible Power Supply Welding Solar Inverter Mechanical Parameters Die Size 6.53 x 6.53 Anode Pad Size 5.08 x 5.10 Area Total / Active 42.6/29.4 Thickness 330 µm Wafer Size 150 mm Minimum Street Width 100 µm Flat Position 0 Degree Maximum-Possible Chips per Wafer 331pcs Passivation Frontside Silicon Nitride Front Metal-Anode Pad Al-1%Si (3µm) Backside Metal Cr /Ni /Ag Die Bond Electrically conductive epoxy or solder Reject Ink Dot Size 0.25mm min (black, center) Recommended Storage Environment Store in original container, in dry Nitrogen, <6 months at an ambient temperature of 23°C mm2 Features Benefits Low VF High efficiency in a wide range of applications Ultra Fast-Soft Recovery Performance optimized for IGBT anti parallel diode VRRM = 1200V IF (Nominal) = 75A TJ (max) = 150°C VF typ = 2.3V Chip Type VRRM Package Type IF(Nominal) Die Size IRD3CH42DB6 1200V 75A 6.53 x 6.53mm2 Wafer Ultra Fast-Soft Recovery Diode A C C A Cathode Anode |
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