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IDT70V05L20PFI Datasheet(PDF) 10 Page - Integrated Device Technology

Part No. IDT70V05L20PFI
Description  HIGH-SPEED 3.3V 8K x 8 DUAL-PORT STATIC RAM
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Manufacturer  IDT [Integrated Device Technology]
Direct Link  http://www.idt.com
Logo IDT - Integrated Device Technology

IDT70V05L20PFI Datasheet(HTML) 10 Page - Integrated Device Technology

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6.42
IDT70V05S/L
High-Speed 8K x 8 Dual-Port Static RAM
Military, Industrial and Commercial Temperature Ranges
10
NOTES:
1. Transition is measured 0mV from Low or High-impedance voltage with Output Test Load (Figure 2).
2.
This parameter is determined by device characterization but is not production tested.
3. To access SRAM,
CE = VIL, SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. Either condition must be valid for the entire tEW time.
4.
The specification for tDH must be met by the device supplying write data to the RAM under all operating conditions. Although tDH and tOW values will vary over voltage and
temperature, the actual tDH will always be smaller than the actual tOW.
5.
“X” in part number indicates power rating (S or L).
AC Electrical Characteristics Over the
Operating Temperature and Supply Voltage(5)
Symbol
Parameter
70V05X15
Com'l Only
70V05X20
Com'l
& Ind
70V05X25
Com'l
& Ind
Unit
Min.
Max.
Min.
Max.
Min.
Max.
WRITE CYCLE
tWC
Write Cycle Time
15
____
20
____
25
____
ns
tEW
Chip Enable to End-of-Write(3)
12
____
15
____
20
____
ns
tAW
Address Valid to End-of-Write
12
____
15
____
20
____
ns
tAS
Address Set-up Time(3)
0
____
0
____
0
____
ns
tWP
Write Pulse Width
12
____
15
____
20
____
ns
tWR
Write Recovery Time
0
____
0
____
0
____
ns
tDW
Data Valid to End-of-Write
10
____
15
____
15
____
ns
tHZ
Output High-Z Time(1,2)
____
10
____
12
____
15
ns
tDH
Data Hold Time(4)
0
____
0
____
0
____
ns
tWZ
Write Enable to Output in High-Z(1,2)
____
10
____
12
____
15
ns
tOW
Output Active from End-of-Write(1,2,4)
0
____
0
____
0
____
ns
tSWRD
SEM Flag Write to Read Time
5
____
5
____
5
____
ns
tSPS
SEM Flag Contention Window
5
____
5
____
5
____
ns
2941 tbl 12a
Symbol
Parameter
70V05X35
Com'l
& Ind
70V05X55
Com'l
& Ind
Unit
Min.
Max.
Min.
Max.
WRITE CYCLE
tWC
Write Cycle Time
35
____
55
____
ns
tEW
Chip Enable to End-of-Write(3)
30
____
45
____
ns
tAW
Address Valid to End-of-Write
30
____
45
____
ns
tAS
Address Set-up Time(3)
0
____
0
____
ns
tWP
Write Pulse Width
25
____
40
____
ns
tWR
Write Recovery Time
0
____
0
____
ns
tDW
Data Valid to End-of-Write
15
____
30
____
ns
tHZ
Output High-Z Time(1,2)
____
15
____
25
ns
tDH
Data Hold Time(4)
0
____
0
____
ns
tWZ
Write Enable to Output in High-Z(1,2)
____
15
____
25
ns
tOW
Output Active from End-of-Write(1,2,4)
0
____
0
____
ns
tSWRD
SEM Flag Write to Read Time
5
____
5
____
ns
tSPS
SEM Flag Contention Window
5
____
5
____
ns
2941 tbl 12b


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