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NTE388 Datasheet(PDF) 2 Page - NTE Electronics

Part No. NTE388
Description  Silicon Complementary Transistors General Purpose High Power Audio, Disk Head Positioner for Linear Applications
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Maker  NTE [NTE Electronics]
Homepage  http://www.nteinc.com
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NTE388 Datasheet(HTML) 2 Page - NTE Electronics

   
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Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage
VCEO(sus) IC = 100mA, IB = 0, Note 3
250
V
Collector Cutoff Current
ICEX
VCE = 250V, VBE(off) = 1.5V
250
µA
ICEO
VCE = 200V, IB = 0
500
µA
Emitter Cutoff Current
IEBO
VEB = 5V, IC = 0
500
µA
Second Breakdown
Second Breakdown Collector Current
IS/b
VCE = 50V, t = 0.5s (non–repetitive)
5
µA
with Base Forward Bias
VCE = 80V, t = 0.5s (non–repetitive)
2
µA
ON Characteristics
DC Current Gain
hFE
VCE = 4V, IC = 8A
15
60
VCE = 4V, IC = 16A
5
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 8A, IB = 800mA
1.4
V
IC = 16A, IB = 3.2A
4.0
V
Base–Emitter On Voltage
VBE(on)
VCE = 4V, IC = 8A
2.2
V
Dynamic Characteristics
Current Gain–Bandwidth Product
fT
VCE = 10V, IC = 1A, ftest = 1MHz
4
MHz
Output Capacitance
Cob
VCB = 10V, IE = 0, ftest = 1MHz
500
pF
Note 3. Pulse Test: Pulse Width = 300
µs, Duty Cycle ≤ 2%.
1.187
(30.16)
.875 (22.2)
Dia Max
.665
(16.9)
.430
(10.92)
Seating
Plane
.040 (1.02)
.312 (7.93) Min
.135 (3.45) Max
.350 (8.89)
Emitter
Collector/Case
Base
.215 (5.45)
.525 (13.35) R Max
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max


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