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U630H16SK35G1 Datasheet(PDF) 5 Page - List of Unclassifed Manufacturers

Part # U630H16SK35G1
Description  HARDSTORE 2K X 8 NVSRAM
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Manufacturer  ETC [List of Unclassifed Manufacturers]
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U630H16SK35G1 Datasheet(HTML) 5 Page - List of Unclassifed Manufacturers

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5
April 7, 2005
U630H16
Read Cycle 1: Ai-controlled (during Read cycle: E = G = VIL, W = NE = VIH)f
ta(A)
Output Data Valid
tcR
Address Valid
tv(A)
Ai
DQi
Output
Read Cycle 2: G-, E-controlled (during Read cycle: W = NE = VIH)g
Ai
E
G
DQi
Output
tdis(E)
tcR
ta(E)
ten(E)
ten(G)
ta(G)
tdis(G)
Address Valid
High Impedance
ICC
ACTIVE
STANDBY
tPD
tPU
No. Switching Characteristics
Write Cycle
Symbol
25
35
45
Unit
Alt. #1 Alt. #2
IEC
Min. Max. Min. Max. Min. Max.
12 Write Cycle Time
tAVAV
tAVAV
tcW
25
35
45
ns
13 Write Pulse Width
tWLWH
tw(W)
20
30
35
ns
14 Write Pulse Width Setup Time
tWLEH
tsu(W)
20
30
35
ns
15 Address Setup Time
tAVWL
tAVEL
tsu(A)
00
0ns
16 Address Valid to End of Write
tAVWH
tAVEH tsu(A-WH) 20
30
35
ns
17 Chip Enable Setup Time
tELWH
tsu(E)
20
30
35
ns
18 Chip Enable to End of Write
tELEH
tw(E)
20
30
35
ns
19 Data Setup Time to End of Write
tDVWH
tDVEH
tsu(D)
12
18
20
ns
20 Data Hold Time after End of Write
tWHDX
tEHDX
th(D)
00
0ns
21 Address Hold after End of Write
tWHAX
tEHAX
th(A)
00
0ns
22 W LOW to Output in High-Zh, i
tWLQZ
tdis(W)
10
13
15
ns
23 W HIGH to Output in Low-Z
tWHQX
ten(W)
55
5ns
(1)
(2)
(9)
(1)
(3)
(4)
(5)
(7)
(6)
(8)
(10)
(11)
ta(A) (2)
Previous Data Valid
Output Data Valid


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