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NTE384 Datasheet(PDF) 1 Page - NTE Electronics

Part No. NTE384
Description  Silicon NPN Transistor High Voltage Power Amp/Switch
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Maker  NTE [NTE Electronics]
Homepage  http://www.nteinc.com
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NTE384 Datasheet(HTML) 1 Page - NTE Electronics

   
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NTE384
Silicon NPN Transistor
High Voltage Power Amp/Switch
Description:
The NTE384 is a multiple epitaxial silicon NPN power transistor in a TO66 type package utilizing a
multiple–emitter site structure. Multiple–epitaxial construction maximizes the volt–ampere character-
istic of the device and provides fast switching speeds. Multiple–emitter design ensures uniform cur-
rent flow throughout the structure, which produces a high IS/b and a large safe–operation–area.
The NTE384 is characterized for use in inverters operating directly from a rectified 110V power line.
The leakage current is specified at 450V; therefore the device can also be used in a series bridge
configuration on a 220V line. The VEBO rating of 9V eases requirements on the drive transformer in
inverter applications.
Features:
D Maximum Safe–Area–of–Operation
D Low Saturation Voltages
D High Voltage Rating: VCER(sus) = 375V
D High Dissipation Rating: PT = 45W
Absolute Maximum Ratings:
Collector–Base Voltage, VCBO
375V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Sustaining Voltage
With Base Open, VCEO(sus)
350V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
With Reverse Bias (VBE) of –1.5V, VCEX(sus)
375V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
With External Base–Emitter Resistance (RBE) ≤ 50Ω, VCER(sus)
375V
. . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEBO
9V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
Continuous
7A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
10A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Base Current, IB
4A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Transistor Dissipation (TC ≤ +25°C, VCE ≤ 40V), PT
45W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, Topr
–65
° to +200°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg
–65
° to +200°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/32 in. (0.8mm) from case, 10sec max), TL
+230
°C
. . . . . . .
Thermal Resistance, Junction to Case (VCE = 20V, IC = 2.25A), RΘJC
3.9
°C/W
. . . . . . . . . . . . . . . . .


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