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NTE38 Datasheet(PDF) 2 Page - NTE Electronics

Part No. NTE38
Description  Silicon Complementary Transistors High Voltage, Medium Power Switch
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Maker  NTE [NTE Electronics]
Homepage  http://www.nteinc.com
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NTE38 Datasheet(HTML) 2 Page - NTE Electronics

   
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Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics (Note 2)
Collector–Emitter Sustaining Voltage
NTE38
VCEO(sus) IC = 200mA, IB = 0
350
V
NTE175
300
V
Collector–Emitter Sustaining Voltage
NTE38 Only
VCEX(sus) IC = 200mA, VBE = –1.5V, L = 10mH
400
V
VCER(sus) IC = 200mA, IB = 0, RBE = 50Ω
375
V
Emitter–Base Breakdown Voltage
NTE38 Only
VEBO
IE = 0.5mA, IC = 0
6
V
Collector Cutoff Current
ICEO
VCE = 150V, IB = 0
5
mA
Collector Cutoff Current
NTE38
ICEV
VCE = 250V, VBE(off) = 1.5V
0.5
mA
VCE = 250V, VBE(off) = 1.5V, TC = +100°C
5.0
mA
VCE = 315V, VBE(off) = 1.5V
0.5
mA
VCE = 315V, VBE(off) = 1.5V, TC = +100°C
5.0
mA
VCE = 360V, VBE(off) = 1.5V
0.5
mA
VCE = 360V, VBE(off) = 1.5V, TC = +100°C
5.0
mA
NTE175
ICEX
VCE = 450V, VBE(off) = 1.5V
1.0
mA
VCE = 300V, VBE(off) = 1.5V, TC = +150°C
3.0
mA
Emitter Cutoff Current
IEBO
VEB = 6V, IC = 0
0.5
mA
ON Characteristics (Note 2)
DC Current Gain
NTE38
hFE
IC = 1A, VCE = 4V
10
100
NTE175
IC = 0.1A, VCE = 10V
40
IC = 1A, VCE = 2V
8
80
IC = 1A, VCE = 10V
25
100
Collector–Emitter Saturation Voltage
NTE38
VCE(sat)
IC = 1A, IB = 125mA
2.0
V
NTE175
0.75
V
Base–Emitter Saturation Voltage
NTE38
VBE(sat)
IC = 1A, IB = 125mA
1.4
V
NTE175
IC = 1A, IB = 100mA
1.4
V
Base–Emitter ON Voltage
NTE175 Only
VBE(on)
IC = 1A, VCE = 10V
1.4
V
Dynamic Characteristics
Current Gain –Bandwidth Product
NTE38
fT
IC = 200mA, VCE = 10V, ftest = 5MHz,
20
MHz
NTE175
C
CE
test
Note 3
15
MHz
Output Capacitance (NTE175 Only)
Cob
VCB = 10V, IE = 0, f = 1MHz
120
pF
Note 2. Pulse Test: Pulse Width
≤ 300µs, Duty Cycle ≤ 2%.
Note 3. fT = |hfe|  ftest


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