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NTE38 Datasheet(PDF) 1 Page - NTE Electronics

Part No. NTE38
Description  Silicon Complementary Transistors High Voltage, Medium Power Switch
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Maker  NTE [NTE Electronics]
Homepage  http://www.nteinc.com
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NTE38 Datasheet(HTML) 1 Page - NTE Electronics

   
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NTE38 (PNP) & NTE175 (NPN)
Silicon Complementary Transistors
High Voltage, Medium Power Switch
Description:
The NTE38 (PNP) and NTE175 (NPN) complementary silicon transistors are designed for high–
speed switching and linear amplifier applications for high–voltage operational amplifiers, switching
regulators, converters, inverters, deflection stages, and high fidelity amplifiers.
Features:
D Collector–Emitter Sustaining Voltage:
NTE38:
VCEO(sus) = 350V @ IC = 200mA
NTE175: VCEO(sus) = 300V @ IC = 200mA
D Second Breakdown Collector Current:
NTE38
IS/b = 875mA @ VCE = 40V
NTE175 IS/b = 350mA @ VCE = 100V
D Usable DC Current Gain to 2.0Adc
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO
NTE38
350V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE175
300V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Voltage, VCB
NTE38
400V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE175
500V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEB
6Vdc
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
Continuous
2A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1)
5A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, IB
1A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (TC = +25°C), PD
35W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate above 25
°C
0.2W/
°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, TJ
–65
° to +200°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Junction Temperature Range, Tstg
–65
° to +200°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction to Case, RΘJC
5
°C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Pulse Test (NTE175 Only): Pulse Width = 5ms, Duty Cycle
≤ 10%.


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