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NTE38 Datasheet(PDF) 3 Page - NTE Electronics

Part No. NTE38
Description  Silicon Complementary Transistors High Voltage, Medium Power Switch
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Maker  NTE [NTE Electronics]
Homepage  http://www.nteinc.com
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NTE38 Datasheet(HTML) 3 Page - NTE Electronics

   
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Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Second Breakdown
Second Breakdown Collector Current
NTE38
IS/b
t = 1s (Non–Repetitive), VCE = 40V
875
mA
NTE175
VCE = 100V
350
mA
Switching Characteristics
NTE38
Rise Time
tr
VCC = 200V, IC = 1A
0.6
µs
Storage Time
ts
CC
C
IB1 = IB2 = 125mA
2.5
µs
Fall Time
tf
0.6
µs
NTE175
Rise Time
tr
VCC = 200V,
IB1 = 100mA, RL = 200Ω
3.0
µs
Storage Time
ts
CC
IC = 1A
IB1 = IB2 = 100mA
4.0
µs
Fall Time
tf
3.0
µs
.485 (12.3)
Dia
.062 (1.57)
.295 (7.5)
.360
(9.14)
Min
.031 (0.78) Dia
.960 (24.3)
Base
.580 (14.7)
.200
(5.08)
Emitter
Collector/Case
.145 (3.7) R Max
.147 (3.75) Dia
(2 Places)


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