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NTE379 Datasheet(PDF) 2 Page - NTE Electronics

Part No. NTE379
Description  Silicon NPN Transistor Power Amp, High Voltage, Switch
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Maker  NTE [NTE Electronics]
Homepage  http://www.nteinc.com
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NTE379 Datasheet(HTML) 2 Page - NTE Electronics

   
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Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics (Note 2)
Collector–Emitter Sustaining Voltage
VCEO(sus) IC = 10mA, IB = 0
400
V
Collector Cutoff Current
ICEV
VCEV = 700V, VBE(off) = 1.5V
1
mA
VCEV = 700V, VBE(off) = 1.5V,
TC = +100°C
5
mA
Emitter Cutoff Current
IEBO
VEB = 9V, IC = 0
1
mA
ON Characteristics (Note 2)
DC Current Gain
hFE
IC = 5A, VCE = 5V
8
40
IC = 8A, VCE = 5V
6
30
Collector–Emitter Saturation Voltage
VCE(sat)
IC = 5A, IB = 1A
1.0
V
IC = 8A, IB = 1.6A
1.5
V
IC = 12A, IB = 3A
3.0
V
IC = 8A, IB = 1.6A, TC = +100°C
2.0
V
Base–Emitter Saturation Voltage
VBE(sat)
IC = 5A, IB = 1A
1.2
V
IC = 8A, IB = 1.6A
1.6
V
IC = 8A, IB = 1.6A, TC = +100°C
1.5
V
Dynamic Characteristics
Current Gain–Bandwidth Product
fT
IC = 500mA, VCE = 10V, f = 1MHz
4
MHz
Output Capacitance
Cob
VCB = 10V, IE = 0, f = 0.1MHz
180
pF
Switching Characteristics
Resistive Load
Delay Time
td
0.06
0.1
µs
Rise Time
tr
VCC = 125V, IC = 8A,
µ
0.45
1.0
µs
Storage Tme
ts
IB1 = IB2 = 1.6A, tp = 25µs,
Duty Cycle
≤ 1%
1.3
3.0
µs
Fall Time
tf
Duty Cycle
≤ 1%
0.2
0.7
µs
Inductive Load, Clamped
Voltage Storage Time
tsv
IC = 8A, Vclamp = 300V, IB1 = 1.6A,
0.92
2.3
µs
Crossover Time
tc
IC = 8A, Vclamp = 300V, IB1 = 1.6A,
VBE(off) = 5V, TC = +100°C
0.12
0.7
µs
Note 2. Pulse Test: Pulse Width = 300
µs, Duty Cycle = 2%.


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