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PXAC210552ND Datasheet(PDF) 7 Page - Infineon Technologies AG

Part # PXAC210552ND
Description  Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 ??2170 MHz
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

PXAC210552ND Datasheet(HTML) 7 Page - Infineon Technologies AG

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Data Sheet
7 of 9
Rev. 04.1, 2017-01-09
PXAC210552ND
Package Outline Specifications
Package PG-HB1SOF-4-1 (top view)
2 x 0.35
19.44
6
14.94 ± 0.15
2 X 10
°
4 X
Y
19.44
1
2 x 1.65
3.28
2 x 6.55
4 x 4.90
4 x 3.99
1.86
1.27
0.25
2.62
4 x 1.02
D1
D2
G2
G1
PG-HB1SOF-4-1_part1_02_07-07-2016
19.44
4 X 4.90
2 X 6.55
4 X 3.99
3.28
2 X 1.65
2X 0.35
14.94 ± 0.15
17.53
19.44
17.53
4 X 7°
2 X 10°
PG-HB1SOF-4-1_02_12-12-2016
1.27
1.86
4 X 1.02
2.62
0.25
Y
16.26
18.44
D1
D2
G1
G2
G1
G2
PG-HB1SOF-4-1_02_12-12-2016
Diagram Notes—unless otherwise specified:
1. Mold/dam bar/metal protrusion of 0.30 mm max per side not included.
2. Metal protrusions are connected to source and shall not exceed 0.10 mm max.
3. Fillets and radii: all radii are 0.30 mm max.
4. Interpret dimensions and tolerances per ISO 8015.
5. Dimensions are mm.
6. Does not include mold/dam bar and metal protrusion.
7. All tolerances ± 0.1 mm unless specified otherwise.
8. All metal surfaces pre-plated, except area of cut.
9. Lead thickness: 0.25 mm.
10. Gold plating thickness: 0.25 micron max.
11. Pins: D1, D2 – drain; G1, G2 – gate; S – source.
PG-HB1SOF-4-1_03_01-12-2017
4x 3.99
4x 4.90
2x 6.55
2x 0.35
2x 1.65
4x 7°
2x 10°
4x 1.02
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower


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