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PTRA093818NF Datasheet(PDF) 3 Page - Infineon Technologies AG

Part No. PTRA093818NF
Description  Thermally-Enhanced High Power RF LDMOS FET 415 W, 48 V, 925 960 MHz
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Maker  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
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PTRA093818NF Datasheet(HTML) 3 Page - Infineon Technologies AG

 
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Data Sheet
3 of 10
Rev. 05.1, 2017-08-16
PTRA093818NF
Typical RF Performance (data taken in production test fixture)
0
10
20
30
40
50
60
70
-70
-60
-50
-40
-30
-20
-10
0
25
30
35
40
45
50
55
Average Output Power (dBm)
Single-carrier WCDMA Drive-up
VDD = 48 V, IDQ(MAIN) = 200 mA,
VGS(PEAK) = 2.0 V, ƒ = 960 MHz,
3GPP WCDMA signal, PAR = 10 dB,
BW = 3.84 MHz
ACPU
ACPL
Efficiency
ptra093818nf_g2
-30
-25
-20
-15
-10
-5
0
-35
-30
-25
-20
-15
-10
750 800 850 900 950 1000 1050 1100
Frequency (MHz)
Single-carrier WCDMA Broadband
Performance
VDD = 48 V, IDQ(MAIN) = 200 mA,
VGS(PEAK) = 2.0 V, POUT = 49.1 dBm,
3GPP WCDMA signal, PAR = 10 dB
ACPU
ACPL
IRL
ptra093818nf_g4
30
35
40
45
50
55
60
14
16
18
20
750 800 850 900 950 1000 1050 1100
Frequency (MHz)
Single-carrier WCDMA Broadband
Performance
VDD = 48 V, IDQ(MAIN) = 200 mA,
VGS(PEAK) = 2.0 V, POUT = 49.1 dBm,
3GPP WCDMA signal, PAR = 10 dB
Efficiency
Gain
ptra093818nf_g3
0
10
20
30
40
50
60
70
13
14
15
16
17
18
19
20
29
33
37
41
45
49
53
57
Output Power (dBm)
CW Performance
VDD = 48 V, IDQ(MAIN) = 200 mA,
VGS(PEAK) = 2.0 V
ptra093818nf_g5
925MHz
942.5MHz
960MHz
Gain
Efficiency


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