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MMBD717 Datasheet(PDF) 1 Page - Galaxy Semi-Conductor Holdings Limited

Part # MMBD717
Description  Schottky Barrier Diode
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Manufacturer  BILIN [Galaxy Semi-Conductor Holdings Limited]
Direct Link  http://www.galaxycn.com
Logo BILIN - Galaxy Semi-Conductor Holdings Limited

MMBD717 Datasheet(HTML) 1 Page - Galaxy Semi-Conductor Holdings Limited

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Production specification
Schottky Barrier Diode
MMBD717
F071
www.gmesemi.com
Rev.A
1
FEATURES
Extremely fast switching speed.
Extremely low forward voltage-
0.28V(Typ)@IF=1mA.
Common anode.
APPLICATIONS
High speed switching application ,circuit protection
SOT-323
and voltage clamping.
ORDERING INFORMATION
Type No.
Marking
Package Code
MMBD717
B3
SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Characteristic
Symbol
Limits
Unit
DC Reverse Voltage
VR
20
V
Power Dissipation
Pd
200
mW
Operating Junction Temperature Range
Tj
150
℃
Storage Temperature Range
TSTG
-55 to +150
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Characteristic
Symbol
Min
TYP
MAX
UNIT
Test Condition
Reverse Breakdown Voltage
V(BR)R
20
-
V
IR= 10μA
Forward Voltage
VF
-
0.28
0.37
V
IF=1.0mA
Reverse Leakage Current
IR
-
0.05
1.0
μA
VR=10V
Diode Capacitance
CD
-
2.0
2.5
pF
VR=1.0V,f=1MHz
Pb
Lead-free


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