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IDH10G65C6 Datasheet(PDF) 6 Page - Infineon Technologies AG |
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IDH10G65C6 Datasheet(HTML) 6 Page - Infineon Technologies AG |
6 / 10 page Final Datasheet 6 Rev. 2.0, 2017-05-23 6th Generation CoolSiCTM IDH10G65C6 QC= f(diF/dt); Tj = 150 °C; VR= 400 V; IF ≤ IF,max IR= f(VR); parameter: Tj Figure 5 Typ. cap. charge vs. current slope Figure 6 Typ. reverse current vs. reverse voltage Zth,jc= f(tP); parameter: D = tP/T C = f(VR); Tj= 25 °C; f = 1 MHz Figure 7 Max. transient thermal impedance Figure 8 Typ. capacitance vs. reverse voltage |
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