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DZ3600S17K3-B2 Datasheet(PDF) 1 Page - Infineon Technologies AG

Part No. DZ3600S17K3-B2
Description  IGBT-Module
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Maker  INFINEON [Infineon Technologies AG]
Homepage  http://www.infineon.com
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1
TechnischeInformation/TechnicalInformation
DZ3600S17K3_B2
IGBT-Module
IGBT-modules
preparedby:WB
approvedby:PL
dateofpublication:2013-11-25
revision:2.2
VorläufigeDaten
PreliminaryData
Diode,Wechselrichter/Diode,Inverter
HöchstzulässigeWerte/MaximumRatedValues
PeriodischeSpitzensperrspannung
Repetitivepeakreversevoltage
Tvj = 25°C
VRRM

1700
 V
Dauergleichstrom
ContinuousDCforwardcurrent

IF

3600
 A
PeriodischerSpitzenstrom
Repetitivepeakforwardcurrent
tP = 1 ms
IFRM

7200
 A
Grenzlastintegral
I²t-value
VR = 0 V, tP = 10 ms, Tvj = 125°C
I²t

1500
 kA²s
CharakteristischeWerte/CharacteristicValues
min.
typ.
max.
Durchlassspannung
Forwardvoltage
IF = 3600 A, VGE = 0 V
IF = 3600 A, VGE = 0 V
VF
1,80
1,90
2,20
V
V
Tvj = 25°C
Tvj = 125°C
Rückstromspitze
Peakreverserecoverycurrent
IF = 3600 A, - diF/dt = 15000 A/µs (Tvj=125°C)
VR = 900 V
VGE = -15 V
IRM

3050
3300

A
A
Tvj = 25°C
Tvj = 125°C
Sperrverzögerungsladung
Recoveredcharge
IF = 3600 A, - diF/dt = 15000 A/µs (Tvj=125°C)
VR = 900 V
VGE = -15 V
Qr

875
1450

µC
µC
Tvj = 25°C
Tvj = 125°C
AbschaltenergieproPuls
Reverserecoveryenergy
IF = 3600 A, - diF/dt = 15000 A/µs (Tvj=125°C)
VR = 900 V
VGE = -15 V
Erec

575
1000

mJ
mJ
Tvj = 25°C
Tvj = 125°C
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
proDiode/perdiode
RthJC


14,0 K/kW
Wärmewiderstand,GehäusebisKühlkörper
Thermalresistance,casetoheatsink
proDiode/perdiode
λPaste=1W/(m·K)/λgrease=1W/(m·K)
RthCH

6,00
K/kW
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions

Tvj op
-40

125
°C




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