AP4453J

Advanced Power

P-CHANNEL ENHANCEMENT MODE

Electronics Corp.

POWER MOSFET

▼ Lower Gate Charge

-30V

▼ Simple Drive Requirement

20mΩ

▼ Fast Switching Characteristic

-29.5A

▼ RoHS Compliant & Halogen-Free

Description

Symbol

Units

V

V

A

A

A

W

W

Single Pulse Avalanche Energy

3

mJ

℃

℃

Symbol

Value

Units

Rthj-c

Maximum Thermal Resistance, Junction-case

4.8

℃

/W

Rthj-a

110

℃

/W

Data and specifications subject to change without notice

72

-18.6

Maximum Thermal Resistance, Junction-ambient

-55 to 150

Parameter

Operating Junction Temperature Range

Thermal Data

Pulsed Drain Current

1

Storage Temperature Range

Halogen-Free Product

-100

1

26

-55 to 150

201611291

-29.5

Rating

-30

+20

Total Power Dissipation

3

1.13

Total Power Dissipation

Parameter

Drain-Source Voltage

Gate-Source Voltage

AP4453 series are from Advanced Power innovated design and

silicon process technology to achieve the lowest possible on-

resistance and fast switching performance. It provides the designer

with an extreme efficient device for use in a wide range of power

applications.

The straight lead version TO-251 package is widely preferred for all

commercial-industrial through hole applications.

G

D

S

G

D S

TO-251(J)

.